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    TRIAC BT 136

    Abstract: BT 136 TRIAC BT136 working triac bt136 temperature control by triac BT136 triac bt 135 bt136 triac TRIAC TAG 90 BT136 motor BT136 application note
    Text: PHILIPS INTERNATIONAL bSE ]> • 711Da2b 00bS23ö ^ 3 «PHIN BT136 SERIES y V. TRIACS Glass-passivated 4 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal


    OCR Scan     		711Da2b 00bS23Ã BT136 BT136-500 711005b 00b224Ã M1644 BT136F D8573 TRIAC BT 136 BT 136 TRIAC working triac bt136 temperature control by triac BT136 triac bt 135 bt136 triac TRIAC TAG 90 BT136 motor BT136 application note PDF

    triac tag 87

    Abstract: TRIAC BT 136 BT136 working triac bt136 triac bt 135 BT 136 TRIAC TRIAC BT 136-500D TO220 bt136 triac D8384 triac BT 06 400
    Text: P H IL I P S INTERNATIONAL bSE 711D a2b T> 00bS 23ö ^ 3 • P H IN BT136 SERIES TRIACS Glass-passivated 4 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high therm al cycling performance w ith very low thermal


    OCR Scan     		711Da2b 0Db523Ã BT136 BT136-500 M1625 BT136G 711002b 00b224Ã M1644 triac tag 87 TRIAC BT 136 working triac bt136 triac bt 135 BT 136 TRIAC TRIAC BT 136-500D TO220 bt136 triac D8384 triac BT 06 400 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCS10MS HARRIS æ S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate September 1995 Pinouts Features 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-183S CDIP2-T14, LEAD FINISH C TOP VIEW


    OCR Scan     		HCS10MS MIL-STD-183S CDIP2-T14, 43G2271 00b2247 05A/cm2 00bEB4A PDF

    PD488170L

    Abstract: NEC Rambus RDRAM cross reference NSN LTE NEC RDRAM 36
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD488170L 18M-BIT Rambus D RA M 1 M - W O R D X 9- BI T X 2 - B A N K Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable o f bursting up to 256 bytes o f data at 2 ns per byte. The use of Rambus S ignaling


    OCR Scan     		uPD488170L 18M-BIT 18-Megabit P32G6-65A b4575ZS PD488170L NEC Rambus RDRAM cross reference NSN LTE NEC RDRAM 36 PDF