003MS Search Results

1N5415

Abstract: 1N5415US 1N5416US 1N5417US 1N5420 1N5420US
Contextual Info: MME D MIL SPECS MILS □□□□IBS 0Q3MSbS 2TT i- 1 I INCH-POUND | I_ l | The documentation and process conversion | j measures necessary to comply with this | | revision shall be completed by 1 August 19941

Contextual Info: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.

Contextual Info: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.

BD844

Abstract: BD840 BD842 BD839 lem HA BD841 BD843
Contextual Info: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843. Q U ICK R E F E R E N C E D A T A

BDV67

Abstract: BDV66A BDV67A BDV67C BDV97 BDV66
Contextual Info: BDV67A; B BDV67C; D DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. PNP complements are B D V 66A , B, C and D. Matched complementary pairs can be supplied. _

KM44C4100BS

Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Contextual Info: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

BD946

Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
Contextual Info: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948

b0945

Abstract: bd947 BD944 BD945 BD943
Contextual Info: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA

1N9778

Abstract: 1N9628-1 1n9628 3195g 1N9920-1 1N9878 1N9818-1 3195gc 1n9620 1n9918
Contextual Info: H1L 4ML J> H SHfc-LS DOGQISS 003432^ 2S1! • M I L S r , | The documentation and process conversion > | measures necessary to comply with this [ f revision shall be completed by 15 June1994 [ 1- ■- 1 ,-,

BD840

Abstract: BD841 BD839 BD842 BD843 BD844
Contextual Info: BD839 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. P-N-P complements are BD840, BD842 and BD844. QUICK REFERENCE DATA BD839

8086 microprocessor serial communication

Contextual Info: *1* R o c k w e ll Semiconductor Systems RCVDL56DPFL/SP Downloadable K56Plus , V.34 Data, V.17 Fax, AudioSpan, Voice, Speakerphone, Modem Data Pump Introduction Features The Rockwell RCVDL56DPFL/SP is a K56Plus™/V.34 modem data pump family that supports receive data rates