tic125
Abstract: No abstract text available
Text: 7.0 Electrical and Mechanical Specifications 7.1 Electrical and Environmental Specifications 7.1.1 Absolute Maximum Ratings C A U T IO N - Stressing the device parameters above absolute maximum ratings may cause permanent damage to the device. This is a stress rating only. Functional operation o f the device at these
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160-Pin
N8474DSB
0034bb2
Bt8472/8474
Bt8474/2
34bb3
tic125
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tca 335 A
Abstract: tca 765 TCA335A
Text: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range
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fl23SbOS
Q67000-A2272
Q67000-A227Ã
fl235b05
0034b5M
TCA335
tca 335 A
tca 765
TCA335A
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DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BS
D034b64
DG34B
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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2032LV
Abstract: PT12 0138a 0031e 0034B ispLSI1000 isplsi architecture
Text: 2000, 2000E and 2000V Family Architectural Description global GLB clock input signals CLK0, CLK1, and CLK2. These three clocks are used for clocking all the GLBs configured as registers in the device. They feed directly to the GLB clock input via a clock multiplexer. CLK0 is
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2000E
t20ptxor)
2-0042-16/2K
2032-135L.
2032LV
PT12
0138a
0031e
0034B
ispLSI1000
isplsi architecture
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y COM’L: -15/20 M A C H 4 6 5 -1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circult programmable
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15nsta>
PAL34V16â
MACH465-15/20
025752b
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pal 014
Abstract: No abstract text available
Text: PRELIMINARY COM’L: -15/20 MACH355-15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 144 Pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circuit programmable ■ Flexible clocking
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MACH355-15/20
PAL33V16â
025752b
Q034b3fl
pal 014
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7486 XOR GATE
Abstract: circuit diagram of half adder using IC 7486 7486 2-input xor gate ic 7486 XOR GATE pin configuration IC 7486 pin configuration of 7486 IC vhdl code for vending machine pin DIAGRAM OF IC 7486 data sheet IC 7408 laf 0001
Text: Lattice Semiconductor Handbook 1994 Click on one of the following choices: • Table of Contents • How to Use This Handbook • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. Lattice Semiconductor Handbook 1994 i Copyright © 1994 Lattice Semiconductor Corporation.
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PLSI 1016-60LJ
Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density
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1016E
1032E
20ters
48-Pin
304-Pin
PLSI 1016-60LJ
PAL 007 pioneer
pal16r8 programming algorithm
PAL 008 pioneer
lattice 1016-60LJ
ISP Engineering Kit - Model 100
PLSI-2064-80LJ
GAL16v8 programmer schematic
GAL programming Guide
ispLSI 2064-80LT
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T2D 22 diode
Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA
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BDT60
BDT60B
BDT61,
BDT61A,
BDT61B
BDT61C.
BDT60
T2D 22 diode
T2D 56 DIODE
T2D DIODE
diode t2d 05
T2D 70 diode
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BF 331 TRANSISTORS
Abstract: bdt60bf
Text: BDT60F; BDT60AF BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT 186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.
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BDT60F;
BDT60AF
BDT60BF;
BDT60CF
BDT61F,
BDT61AF,
BDT61BF
BDT61CF.
BDT60F
BF 331 TRANSISTORS
bdt60bf
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Untitled
Abstract: No abstract text available
Text: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general
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BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
BDS949
BDS951
BDS953
BDS955
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BDS78
Abstract: No abstract text available
Text: Philips Components Data sheet status P r o d u c t s p e c ific a t io n date of issue A p ril 1991 BDS202/204/78 PN P silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors in a miniature SMD envelope
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BDS202/204/78
OT223
OT223)
BDS201/203/77.
BDS202
BDS204
BDS78
0034b04
003MbDS
BDS78
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BDS202
Abstract: bc 7-25 pnp j78 transistor BDS204 BDS78 IEC134
Text: Philips Components BDS202/204/78 Data sheet status Product specification date of issue April 1991 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors
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BDS202/204/78
OT223)
BDS201/203/77.
PINNING-SOT223
BDS202
BDS204
BDS78
bc 7-25 pnp
j78 transistor
IEC134
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DSP2420
Abstract: No abstract text available
Text: TDA7590 Digital signal processing IC for speech and audio applications Features • 24-bit, fixed point, 120 MIPS DSP core ■ Large on-board memory 128KW-24 bit ■ Host access to internal RAM through expansion port ■ Access to external RAM (16Mw) through
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TDA7590
24-bit,
128KW-24
18-bit
20-bit
TQFP144
144-pin
DSP2420
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TDA7590
Abstract: mozart ADCOM 3A BLH load cell design pure "sine wave" power inverter TQFP144 reel size E-TDA7590 E-TDA7590TR SC11 SC12
Text: TDA7590 Digital signal processing IC for speech and audio applications Preliminary Data Features • 24-bit, fixed point, 120 MIPS DSP core ■ Large on-board memory 128KW-24 bit ■ Host access to internal RAM through expansion port ■ TQFP144 Access to external RAM (16Mw) through
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TDA7590
24-bit,
128KW-24
TQFP144
18-bit
20-bit
TDA7590
mozart
ADCOM 3A
BLH load cell
design pure "sine wave" power inverter
TQFP144 reel size
E-TDA7590
E-TDA7590TR
SC11
SC12
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Untitled
Abstract: No abstract text available
Text: COM'L: -15/25 IND: -12/15/25 PALCE16V8Z FAMILY a Advanced Micro Devices Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 15 nA Standby Current — 12 ns propagation delay for “-12” version
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PALCE16V8Z
20-Pin
PAL16R8
PAL10H8
0257S2b
PALCE16V8Z-25
25752b
QQ3MA75
PALCE16V8ZFamily
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"XOR Gate"
Abstract: 2032E 2128E ispLSI2000-A 74 XOR GATE 2032VE
Text: 2000E, 2000/A, 2000VE 2000VL and 2000V Family Architectural Description or slow output slew rate to minimize overall output switching noise. Introduction The basic unit of logic for the ispLSI 2000E, 2000/A, 2000VE, 2000VL and 2000V device families is the Generic Logic Block GLB . Figure 1 illustrates the ispLSI
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2000E,
2000/A,
2000VE
2000VL
2000VE,
2128E
2032E
"XOR Gate"
ispLSI2000-A
74 XOR GATE
2032VE
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T1693M
Abstract: TL593M TL-694 TL593 ic TL694C TL495 TL493 ST TL493 TL593 tl693
Text: TEXAS S9S1724 INSTR TEXAS -CLIN /IN TFO IN ST R SS D Ë J ÖTblTEM 0D34t54 <LIN/INTFC 55C 1 |~ 34624 T-5 8-1 1 -3 1 TYPES TL593, TL594, TL595 PULSE-WIDTH-MODULATION CONTROL CIRCUITS LINEAR INTEGRATED CIRCUITS D2712, APRIL 1983-REV1SED DECEMBER 1983 Complete PWM Power Control Circuitry •
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0D34t54
S9S1724
200-mA
TL593
TL595
9ei724
TL593,
TL594,
T1693M
TL593M
TL-694
TL593 ic
TL694C
TL495
TL493
ST TL493
tl693
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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16Mx4,
512Kx8)
KM44C4104BK
7Tb4142
0G34bb2
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general
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BDS643/645/647/649/651
-SOT223
OT223,
BDS644/646/648/650/652.
bbS3T31
0034bt
bbS3T31
0034bl0
DQ34bll
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m lc 945
Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
945 npn
947 smd
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PDF
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10BASE2
Abstract: 10BASE5 dcuo-0509d PCnet-Family PCI Ethernet Adapter Am79C900
Text: PRELIMINARY Am79C970 PCnet -PCI Single-Chip Ethernet Controller for PCI Local Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Periph eral Component Interconnect PCI local bus ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and
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Am79C970
Am7990
Am79C90
Am79C960
Am79C961
Am79C965
PCnet-32,
Am79C900
Am2100/Am1500T
NE2100/NE1500
10BASE2
10BASE5
dcuo-0509d
PCnet-Family PCI Ethernet Adapter
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PDF
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BDT61
Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Text: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A
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BDT61
BDT61B
BDT60,
T0-220.
mount986
March-1986
bb53T31
GD34b03
transistor BD 512
BDT60
IEC134
1FC15
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