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irf521 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRF520/521 IRF520 IRF521 002fl7SD irf521	PDF

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irf521

Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

OCR Scan

IRF520/521 IRF520 IRF521 002fl7SD irf521

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