0020B71 Search Results

BUK637-400A

Abstract: BUK637-400B in 4008 diode LP250 00a0B
Contextual Info: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly

Contextual Info: FLASH MEMORY 8M 1M x 8/512K x 16 IlilgfctllM Ni MBM29F800T/MBM29F800B • DISTINCTIVE CHARACTERISTICS • Sing le 5.0 V read, write, and erase Minimizes system level power requirements • Com patible with JED EC -standard com m ands Uses same software commands as E2PROMs