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    0017B Search Results

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    0017B Price and Stock

    Quectel Wireless Solutions Co Ltd YC0017BA

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    DigiKey YC0017BA Digi-Reel 2,641 1
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    YC0017BA Cut Tape 2,641 1
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    YC0017BA Reel 1,500 1,500
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    Avnet Silica YC0017BA 8 Weeks 3,000
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    Eaton Bussmann PTR060V0017-BK

    PTC RESET FUSE 60V 170MA RADIAL
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    Quectel Wireless Solutions Co Ltd YF0017BA

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    Quectel Wireless Solutions Co Ltd YC0017BAEVB

    EVAL BOARD FOR YC0017BA
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    DigiKey YC0017BAEVB Bulk 38 1
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    Datacomm Electronics Inc 45-0017-BK

    SPLIT PLATE W/ FLEX PASS - BLACK
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    0017B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Multilayer Chip Beads BMB-B Series 50 Specification Characteristic Rated DC Resistance Curves Current mA (ohms) See Page maximum maximum. Part Number Impedance (ohms) at 100MHz BMB-1J-0005B-N3 BMB-1J-0017B-N3 BMB-1J-0030B-N3 BMB-1J-0070B-N3 BMB-1J-0100B-N3


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    PDF 100MHz BMB-1J-0005B-N3 BMB-1J-0017B-N3 BMB-1J-0030B-N3 BMB-1J-0070B-N3 BMB-1J-0100B-N3 BMB-1J-0120B-N3 BMB-1J-0200B-N3 BMB-1J-0240B-N3 BMB-1J-0300B-N3

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of


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    PDF R8C/38T-A R01DS0081EJ0100 R8C/38TA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES


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    PDF 0017bfi0 2SC3241 30MHz, 15-j1 2SC3241

    2SC2797

    Abstract: SR1FM transistor power 5w NPN EPITAXIAL PLANAR TYPE 175mhz 1w
    Text: • b2»H flE«ï 0017b? ALT M ITSU BISHI RF PO W ER TR A N SISTO R h 2S C 2 797 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in UHF band. Dim ensions in mm


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    PDF 0017b2Z 2SC2797 770MHz, 175MHz, SR1FM transistor power 5w NPN EPITAXIAL PLANAR TYPE 175mhz 1w

    OF4456

    Abstract: F65L
    Text: M ITSUBISHI LSIs bEH'lßEß 0017b35 530 « Î 1 I T 4 I M5M82C800FP MI TS UB I S H I IUCMPTR/niPRC CMOS PROGRAMMABLE DMAC,IRC,TIMER DESCRIPTION The M 5 M 8 2 C 8 0 0 F P is a CM O S LSI equivalent to tw o M 5 M 8 2 C 3 7 A -5 , tw o M 5 M 8 2 C 5 9 A -2 , and one M 5 M 8 2 C 5 4 .


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    PDF 0017b35 M5M82C800FP 100-pin 100P6 OF4456 F65L

    Untitled

    Abstract: No abstract text available
    Text: 0 1 -0 CD54/74HC173 CD54/74HCT173 File Number 1641 High-Speed CMOS Logic 0017b3T T B HAS Technical D ata . Quad D-Type Flip-Flop, 3-State Positivo-Edge Triggered M3D2271 T y p e Features: • 3-state buffered outputs ■ gated input and output enables 9 2 C S -3 0 4 5 6


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    PDF CD54/74HC173 CD54/74HCT173 M3D2271 0017b3T S69S4RI CD54/74HC CD54/74HCT

    247AA

    Abstract: TO-247AA TO-247-AA ultrafast dual diode 15 amp. 300 volts 16JPF20 16CPF10 16CPF20 16CPF30 16CPF40 FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER
    Text: INTERNATIONAL RECTIFIER bSE D • 4ÔS54SS 0017b73 Tib ■ INR Data Sheet No. PD-2.193 INTERNATIONAL RECTIFIER IO R n 6CPF & 1 6JPF SERIES *l 6 Amp Fast Recovery Dual Center Tap Rectifiers Major Ratings and Characteristics 16CPF10 16CPF20 16JPF10 16JPF20 'o


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    PDF 0017b73 16CPF 16JPF O-247AA Savignystrasse55, D-6000Frankturt/Main 247AA TO-247AA TO-247-AA ultrafast dual diode 15 amp. 300 volts 16JPF20 16CPF10 16CPF20 16CPF30 16CPF40 FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER

    BUX14

    Abstract: BR 4008 transistor BUX14
    Text: Z E SOLID STATE OÏ 387508 f'G E SOLID STATE . . — . ' DlT| 3fl7S0fll 0017bGD L, | ~ 01E 17600 • File Num ber '1203 Silicon N-P-N r* . . . .i • . Switching Transistor D Pro Electron Power Transistors BUX14 TERMINAL DESIGNATIONS For High-Voltage Switching and


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    PDF BUX14 O-204AA RCA-BUX14 r-33i3 92CS-304S5 IICS-14HI BUX14 BR 4008 transistor BUX14

    BFG91

    Abstract: transistor 115 55e BFG23 7z941 transistor 115 25e TRANSISTOR A107
    Text: •I 1^53=531 0017b47 N AUER P H I L I P S / D I S C R E T E BFG23 3 ■ 55E P T - 3 / - / 5 T P-N-P 2 GHz W IDEBAND T R A N SIST O R P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application In wideband amplifiers, such as M A T V and C A T V systems, up to 2 GHz.


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    PDF 0017b47 BFG23 OT-103) BFG91 7z941 7z9412i transistor 115 55e BFG23 transistor 115 25e TRANSISTOR A107

    Untitled

    Abstract: No abstract text available
    Text: öl E SOLID STATE 3875081 m T | 3ñ750fll 0017b4 3 5 G E SOLID STATE 0 1 E 17643 Ultra-Fast-Recovery Rectifiers- BYW51-100, BYW51-150, BYW51-200 D File Number 1412 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers T E R M IN A L D E S IG N A T IO N S


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    PDF 750fll 0017b4 BYW51-100, BYW51-150, BYW51-200 -220A BYW51 ICI-14«

    8YW51-150

    Abstract: 8YW51 RUR820 RUR-810 BYW51-100 d810 BYW51 BYW51-150 BYW51-200 RUR-D815
    Text: 38 75081 m T | 3ñ750fll 0017b43 5 öl E SOLID STATE G E S O L I D S TA TE 01E Ultra-Fast-Recovery Rectifiers- 17643 BYW51-100, BYW51-150, BYW51-200 File Num ber 1412 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers


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    PDF 0017b43 BYW51-100, BYW51-150, BYW51-200 O-22QAB BYW51 1CS-144IÂ 8YW51-150 8YW51 RUR820 RUR-810 BYW51-100 d810 BYW51-150 BYW51-200 RUR-D815

    17312

    Abstract: 0017B
    Text: D EjTCnTeSO 9097250 T O S H IB A 99D < D IS C R E T E /O P T O > 0017B ll 17311 O D T -4 M I TLNI05A GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR. REMOTE CONTROL SYSTEM OPTICAL SWITCH • Output Spectrally Compatible with Silicon Sensor IPS703, TPS703A


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    PDF 0017B TLNI05A IPS703, TPS703A 15mW/sr 100Hz. 70KWARD 001731E 17312

    KM611001

    Abstract: KM611001-20 KM611001-25 KM611001-35
    Text: SAMSUNG ELECTRONICS INC b?E D m T'ìbMmE 0017b41 3 30 • CMOS SRAM KM611001 1 MX 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


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    PDF KM611001 0017b41 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin KM611001 KM611001-20 KM611001-25 KM611001-35

    KM681002J-15

    Abstract: KM681002J-20 256X8 KM681002J-17 samsung chip 820
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM681002 0017bñ4 72b PRELIMINARY SMGK CMOS SRAM 131,072 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.)


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    PDF KM681002 0017bà KM661002J-15: 170mA KM681002J-17: 160mA KM641002J-20: KM681002J: 32-Pin 256X8 KM681002J-15 KM681002J-20 KM681002J-17 samsung chip 820

    BFG23

    Abstract: No abstract text available
    Text: • bbSBTBl 0017b47 3 ■ N AMER PHILIPS/DISCRETE BFG23 SSE D J V T-3l-i£r P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as MATV and CATV systems, up to 2 GHz.


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    PDF 0017b47 BFG23 OT-103) BFG91A. BFG23

    D2E transistor

    Abstract: sumida 455 using ta7358 TA8100F 2157-2239-213A TA7358 TOSHIBA Mitsumi amplifier de RF mitsumi ift coil IFT 455 sumida ift coil
    Text: B B BBS TOSHIBA-. ELECTRONIC 02 dT • | TDTTHMV 0017b03 0 02É 17683 T-77-05-07 TA8100N/F \ 3V AM/FM IF IC WITH POWER AMPLIFIER Unit in mm TA8100N/F is AM/FM IF XC with power amplifier and suitable for low voltage portable radio. This IC is able to drive LED for Turning Indication.


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    PDF TA8100N/F T-77-05-07 220mW TA8100F TA8100N. YT20582, 157-2239-213A YT20580, YT20583 D2E transistor sumida 455 using ta7358 2157-2239-213A TA7358 TOSHIBA Mitsumi amplifier de RF mitsumi ift coil IFT 455 sumida ift coil

    8051 microcontroller LED dot matrix

    Abstract: REL316 bdl 39 jb ds8qc T2D8 microcontroller 8051 application of alarm clock countdown timer using 8051 microcontroller tft interface with 8051 8051 based 20 pin Ic Digital countdown timer DS82CH
    Text: DS80CH10/DS82CH10/DS80CL10/DS82CL10 P R E L IM IN A R Y n . | . A O DS80CH10/DS82CH10 DS80CL10/DS82CL10 Green Energy Manager UALLAO s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding


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    PDF DS80CH10/DS82CH10/DSS00CL10/DS82CL10 DS80CH10/DS82CH10 DS80CL10/DS82CL10 2L1413G DG17522 2bl4130 0017bbl DS80CH10/DS82CH10/DS80CL10/DS82C DS80CH10â DS80CL10â 8051 microcontroller LED dot matrix REL316 bdl 39 jb ds8qc T2D8 microcontroller 8051 application of alarm clock countdown timer using 8051 microcontroller tft interface with 8051 8051 based 20 pin Ic Digital countdown timer DS82CH

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V


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    PDF IDT70V261S/L 100-pin 25/35/55ns PN100-1) 70V261 QG17b43

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)


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    PDF KM68B261A 7Tb4142 170mA KM68B261A 144-bit 0017t 300mil) KM68B261A-6 KM68B261A-7 KM68B261A-8

    Untitled

    Abstract: No abstract text available
    Text: LT1507 u r m TECHNOLOGY 500kHz M o n o lith ic Buck M o d e S w itching R egulator F€RTUR€S • Constant 500kHz Switching Frequency ■ Uses All Surface Mount Components ■ Operates with Inputs as Low as 4V ■ Saturated Switch Design 0.30 ■ Cycle-by-Cycle Current Limiting


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    PDF LT1507 500kHz LT1375 25ower LT1372 LT1375

    Untitled

    Abstract: No abstract text available
    Text: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz


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    PDF AT-42070 AT-42070 Rft/50 0D17bb3 DG17bb4

    Z86e4012

    Abstract: Z86E40 SXGR 86E4012
    Text: ZIL06 INC 30E D B =1=104043 D017b24 -1. » Z I L - T -4 9 -1 9 -0 7 P r o d u c t S p e c if ic a t io n Z8ÌE40 CMOS Z8 OTP CCP MICROCONTROLLER FEATURES • 8-bit CMOS microcontroller ■ Digital inputs CMOS levels, Schmitt triggered


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    PDF l7b24 T-49-19-07 44-pin 40-Pln, 0G17bfl0 286E40 40-Pin Z86e4012 Z86E40 SXGR 86E4012

    Untitled

    Abstract: No abstract text available
    Text: T -m o-o^-o ñ Technical Data CD54/74HC165 CD54/74HCT165 F ile N u m b e r 1672 High-Speed CMOS Logic HARRIS SEMICQND SECTOR 27E D M302271 G017b27 2 I H AS 8-Bit Paraliel-ln/ Serial-Out Shift Register T y p e F ea tu res : • B u tte re d In p u ts ■ A s y n c h ro n o u s P a ra lle l L o a d


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    PDF CD54/74HC165 CD54/74HCT165 M302271 G017b27

    IC - 74HC191

    Abstract: 74HC191 PC 74 HCT 32 P
    Text: T - H 5 -2 .3 - Technical D ata . CD54/74HC190, CD54/74HCT190 CD54/74HC191, CD54/74HCT191 HARRIS SEMICOND SECTOR 27E File Number 4302271 D 1662 DD17bh7&#39; 3 H B H A S High-Speed CMOS Logic 8 C 0 /B IN A R Y PRESET Presettable Synchronous 4-Bit Up/Down Counters


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    PDF CD54/74HC190, CD54/74HCT190 CD54/74HC191, CD54/74HCT191 DD17bh7' 54/74H 54/74HC IC - 74HC191 74HC191 PC 74 HCT 32 P