ic 921
Abstract: Motorola C-QuAM C-QuAM RADIO RECEIVER IC FM stereo u6 ej TA8120P AMP MODU II AM STEREO CQUAM i.c.921
Text: TOSHIBA-, 90 97 24 7 TOSHIBA. ELECTRONIC 02 dF | ^0^7547 001775b 0 |~ ELECTRONIC C-QUAM A M STEREO DECODER Unit in mm TA8120P is a C-QUAM®AM stereo decoding and pilot detection system IC. It contains L+R signal detector, L-R signal detector, pilot signal detector and matrix circuit.
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001775b
TA8120P
DD17771
T-77-05-05
ic 921
Motorola C-QuAM
C-QuAM
RADIO RECEIVER IC FM stereo
u6 ej
AMP MODU II
AM STEREO CQUAM
i.c.921
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c-quam
Abstract: Murata CST 11,0
Text: I I I M I . l . 11. 1 1 . I L . . I . I I M M M . l l . 111. 1 1 . II . I I I I . IM TOSHIBA-, ELECTRONIC 02 9097247 TOSHIBA. l l l l l l l l l . l l l 1 B I I 1I . .1 1 .11P P d F | ^0^7547 001775b 0 | ~ ELECTRONIC C-QUAM AM STEREO DECODER Unit in mm TA8120P is a C-QUAM®AM stereo decoding and pilot
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001775b
TA8120P
DD17771
TA8120P
T-77-05-05
c-quam
Murata CST 11,0
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Untitled
Abstract: No abstract text available
Text: 4SE D • =10=17 250 001775b IT O S H S TO S H IB A TR A N S IS TO R 2N4125 SILICO N P N P E P IT A X IA L T Y P E PC T P R O C ES S TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current * I C B O = - 5 0 n A ( M a x .)
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001775b
2N4125
-50mA,
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Untitled
Abstract: No abstract text available
Text: HN62328B Series Preliminary 8M 1M x 8-b tt M ask RO M • S1E O ESC B m O H » " ', ',< ,b S n 3 H ITA C H I/ ‘H” 7 7 5 " 378 ■ ■ Access Time 150 ns 200 ns 150ns 200 ns Package 32-pin Plastic DIP (DP-32) 32-lead Plastic SOP (FP-32D) PIN DESCRIPTION
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HN62328B
150ns
32-pin
DP-32)
32-lead
FP-32D)
HN62328BP
HN62328BF
HN62328BP-15
HN62328BP-20
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DV31 1
Abstract: No abstract text available
Text: b£E D Si 3 7 bflS2 S 0 0 1 7 7 4 8 b 20 M P L S B GEC PLESSEY GEC PLESSEY SEniCONDS S E M I C O N D U C T O R S DS2468-2-2 ULA DT & DV SERIES HIGH PERFORMANCE MIXED DIGITAL/ANALOG ARRAY FAMILY ULTRA HIGH SPEED DIGITAL ARRAYS WITH HIGH PERFORMANCE ANALOG Supersedes December 1990 edition
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DS2468-2-2
DV31 1
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a1 diode 90244
Abstract: 78058 regulator ir 90244 diode
Text: X T L in ^A B TECHNOLOGY K fflU IK S • High Efficiency: Up to 93% ■ Constant Frequency Adaptive Power Operation ■ Input Voltage Range: 3V to 13.5V ■ Internal 0.6Q Power Switch Vin = 10V ■ Low Dropout Operation: 100% Duty Cycle ■ Low-Battery Detector
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470jliA
20-Lead
450mA,
1433/LTC1434
a1 diode 90244
78058 regulator
ir 90244 diode
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Untitled
Abstract: No abstract text available
Text: bSE D INTERNATIONAL RECTIFIER • MÖ55452 DG177SS flôl ■ INR PD-2.342 International B Rectifier HEXFRED Provisional Data Sheet HFA16TA60C u l t r a f a s t , s o f t RECOVERY DIODE 600V, 16A Major Ratings and Characteristics per Leg Characteristics
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DG177SS
HFA16TA60C
D-6380
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TA7378P
Abstract: TA7370P ta8108
Text: TOSHIBA-. ELECTRONIC OS ▼ 9097247 ' TO SH IB A. ì>Ef| 10^7247 D D 1 7 7 n 02E ELECTRONIC TA8108AP/AF VTÄ8109AP/AF 5 17719 T -7 D 7 05 - - 07 > AM/FM IF SYSTEM Unit in mm TA8108AP/AF, TA8109AP/AF are the AM/F M IF SYSTEM ICs TA8108AP TA8109AP IS wh ic h are designed for Radio Cassette Players and
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TA8108AP/AF
8109AP/AF
TA8108AP/AF,
TA8109AP/AF
TA8108AP
TA8109AP
TA8108AP/AF
TA8109AP/AF
a25-ao5
75mVrm
TA7378P
TA7370P
ta8108
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.
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MSIW5110OOB/BL_
576-Word
MSM511000B/BL
cycles/64ms
b72424G
00177b2
MSM511000B/BL
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LH6B4400BK6
Abstract: No abstract text available
Text: SHARP LH6B4B6K 1 Contents 1. General . 2 2. Features . 2 3. Pin Configuration . 3 4. Absolute Maximum Ratings 4 5. Recommended D C Operating Conditions . 4 6 . Pin Capacitance 4 7. Block Diagram .
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D0177D3
LH6B4400BK-6
576word
26/20pin
0G17725
SOJ26/2Q
001772b
LH6B4400BK6
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