Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 7Û 3749762 FUJITSU MICROELECTRONICS D e | 374c17t,a 0003Gb3 □ |' 78C 03063 FUJITSU M OS M em ories • MB85204-10, MB85204-12, MB85204-15 262,144 x 4-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85204 is a fully decoded, 262,144 word X 4-bit
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0003Gb3
MB85204-10,
MB85204-12,
MB85204-15
MB85204
MB81256
18-pad
24-pin
0D03077
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PDF
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circuit diagram of instrumentation amplifier
Abstract: circuit diagram of instrumentation amplifier with 3626AP 3626CP 3626C
Text: •: o :• B U R R -B R O W N I b I b Low Drift IN S TR U M E N TA TIO N AMPLIFIER FEATURES • LOW VOLTAGE DRIFT @ LOW GAIN 2mV/°C @ G = 5 3626CP • LOW NOISE - 2vV. p-p • HIGH CMR - > 80(1B @ G = 1000 • LOW COST • SMALL SIZE - DIP Package D E S C R IP TIO N
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3626CP)
circuit diagram of instrumentation amplifier
circuit diagram of instrumentation amplifier with
3626AP
3626CP
3626C
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Untitled
Abstract: No abstract text available
Text: 2SK1390 SIPMOS FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications
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2SK1390
Q0D30bl
00030b2
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PDF
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Untitled
Abstract: No abstract text available
Text: r& TO K O TK10650 LOW CURRENT COMPANDOR FEATURES APPLICATIONS I • Low Supply Current ■ Portable Instrumentation ■ Wide Operating Voltage ■ Cordless Telephones ■ Low Standby Current ■ Handy Talkies ■ Microphone Amplifier ■ Interphones | ■ Instantaneous Deviation Control Circuit
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TK10650
TK10650
sig45
TDb7ti32
DDD30bl
R0b7b32
Q0Q30b2
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PDF
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EL2232C
Abstract: hp 2232 EL2020 EL2232 EL2232CM EL2232CN MIL-I-45208A m2232
Text: EL2232C é la n te c HIGHPERFORMANCEANAIÛ6INTEGRATEDCIRCUITS EL2232C SO MHz, Fast SètÜing, Dual Current tvedback Amplifier F eatu res G eneral D escrip • 60 M Hz —3 dB bandwidth, Av = 1 • 50 M Hz —3 dB bandwidth, Av = 2 • 3 mV offset voltage • 10 ju,V/°C Offset D rift
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EL2232C
500il
EL2020
312T557
EL2232
5e-15
0GQ30S7
03DSA
EL2232C
hp 2232
EL2232CM
EL2232CN
MIL-I-45208A
m2232
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PDF
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ADM 3053
Abstract: voice transcever circuit diagram 41516 MT8980 PM4341A PM6341 PM6341E1XC PM7345 PSB 2165 H rohm "marking" T32
Text: PMC-Sierra, Inc. S tandard P roduct I I / 1 ^ ^ P M 6341E 1X C £7 FRAMER/TRANSCEIVER ISSUE 7 FEATURES • Integrates a full-featured E1 transceiver in a single device with analog circuitry fo r receiving and transm itting G.703 2048 kbit/s com patible signals and digital
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PM6341E1XC
PM4341A
14x14x2
ADM 3053
voice transcever circuit diagram
41516
MT8980
PM6341
PM6341E1XC
PM7345
PSB 2165 H
rohm "marking" T32
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PDF
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hydrocarbon sensor
Abstract: OPB826 OPB826S OPB826SD
Text: g>j OPTEK Product Bulletin OPB826 July 1996 Dual Channel Slotted Optical Switches Types OPB826S, OPB826SD Features Absolute Maximum Ratings Ta = 2 5 ° C u n le s s o th e rw is e noted) • Dual channels over/under Storage and Operating T em pe ratu re. -40°C to +85° C
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OPB826
OPB826S,
OPB826SD
OPB826S
OPB826S
OPB826SD
hydrocarbon sensor
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PDF
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Untitled
Abstract: No abstract text available
Text: ~ [f| C O M PLIANT W ITH PCM CA2.1/JEIDA4.2 j LI PC CARD CONTROLLER RF5C296/RF5C396L/RB5C396/RF5C396 OUTLINE The RF5C296, the RF5C396L, the RB5C396, and the RF5C396 are enhanced version of the RF5C266 and RF5C366, LSIs functioning as controllers for interfacing IC memory cards, modems, and I/O cards, such as HDDs,
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RF5C296/RF5C396L/RB5C396/RF5C396
RF5C296,
RF5C396L,
RB5C396,
RF5C396
RF5C266
RF5C366,
RF5C296
RB5C396
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PDF
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Q13A
Abstract: Q11A ICS93V857 ICS95V857 ICSSSTV16859 MLF2
Text: ICSSSTV16859 Integrated Circuit Systems, Inc. DDR 13-Bit to 26-Bit Registered Buffer Recommended Applications: • DDR Memory Modules • Provides complete DDR DIMM logic solution with ICS93V857 or ICS95V857 • SSTL_2 compatible data registers Q13A Q12A Q11A
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Original
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ICSSSTV16859
13-Bit
26-Bit
ICS93V857
ICS95V857
0003G--05/21/02
Q13A
Q11A
ICS95V857
ICSSSTV16859
MLF2
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PDF
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on222 transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Data Sheet High Performance FX Family Gate Arrays FX Family Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW
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MIL-STD-883
G51017-0,
on222 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: September 1994 ^ É k M ^ ic r o L in e a r PREL M NARY ML6508 Programmable Adaptive Clock Manager PACMan GENERAL DESCRIPTION FEATURES The ML6508 is a Programmable Adaptive Clock Manager which offers an ideal solution for managing high speed synchronous clock distribution in next generation, high
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ML6508
ML6508
80MHz.
0003m
CA95131
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PDF
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Untitled
Abstract: No abstract text available
Text: March 1994 PRELIMINARY ^Ék Micro Linear ML6035 5V Spindle Motor Controller and Driver GENERAL DESCRIPTION FEATURES The ML6035 is a 5 volt brushless motor controller and driver. The circuit provides three phase sensorless commutation and speed control. A digital commutation
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ML6035
ML6035
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU fllCROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS DEi| FU JITSU MOS M em o rie s M B 8 52 01 -12 , M B 8 52 01 -15 1,048,576 X 1-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85201 is a fully decoded, 1,048,576 word x 1-bit
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MB85201
MB81256
18-pad
22-ptn
MB85201-12
MB85201-1S
B8S201-15
374T7t
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PDF
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EL2224CN
Abstract: td 232 v8 EL2224 EL2224C EL2224CM MIL-I-45208A QCX0002
Text: EL2224C é t a n t lA fw EL2224C Dual, 60 MHz, Unity Gain Stable, Operational Amplifier HIGH PERFORMANCE ANALOG BITS ¡HATED CIRCUITS Features • • • • • • • • • U nity gain stable Wide bandwidth— 60 M Hz H igh slew rate— 200 V / is H igh power bandwidth
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EL2224C
EL2224CN
MDP0031
EL2224CM
MDP0027
EL2224
mono30
0E-18
0D03042
td 232 v8
EL2224C
MIL-I-45208A
QCX0002
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D Ô3Û23Ô3 00 0 304 5 ISONY 4 SLU304VR SONY, oS~ 800/700mW High Power Laser Diode with a Detachable Fiber Description Package Outline Unit : mm S L U 3 0 4 V R is a high power laser diode based on the SLD 3 0 4 V with a detachable fiber.
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SLU304VR
800/700mW
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PDF
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ci 4548
Abstract: No abstract text available
Text: EPSON PF736-04 _ E0C623E 4-bit Single Chip Microcomputer • Core CPU Architecture • SVD Circuit • Sound Generator I DESCRIPTION The E0C623E is a CMOS single-chip microcomputer composed of the 4-bit core CPU E0C6200A, ROM, RAM, LCD driver, time base counter, stopwatch timer, SVD circuit and sound generator. The E0C623E provides an
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PF736-04
E0C623E
E0C623E
E0C6200A,
768kHz,
100pF
E0C62A3E.
62L3E,
ci 4548
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PDF
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Untitled
Abstract: No abstract text available
Text: L M A 1 0 1 0 / 2 0 1 0 16 x 16-bit Multiplier-Accumulator DEVICES INCORPORATED FEATURES DESCRIPTION □ 45 ns Multiply-Accumulate Time □ Replaces TRW TMC2210, Cypress CY7C510, IDT 7210L, and AMD Am29510 □ Two's Complement or Unsigned Operands □ Accumulator Performs Preload,
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16-bit
TMC2210,
CY7C510,
7210L,
Am29510
MIL-STD-883,
64-pin
68-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS CS 142 Phase Control Thyristors RRM = 1200-1600 V IT RMS = 260 A W v RSM v DSM V RRM V V ^T(RMS) ^T(AV)M ^TSM (di/dt)cr 3 4 CS142-12io8 CS142-16io8 1200 1600 T ,vj, — "^"{vj)m T case = 85°C;’ 180° sine Tease = 75°C; 180“ sine 260 140 164 A
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O-209AC
CS142-12io8
CS142-16io8
439/SW27
0003GÃ
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PDF
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Mys 99 178
Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Text: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B
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AA994896G
2A-M18KS08-WP-C1
1234C
11PFA
14PFA
1001D
VAP21001C
VAP21004H
VAP21015C
2001G
Mys 99 178
MYS 99
cj1w-cort21
NT31C-ST143-Ev3
MYS 99 133
E5CS-R1KJ
8203-M
TL-X1R
4503m
st MYS 99 102
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PDF
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2SK series
Abstract: FUJI FA SERIES
Text: 2SK1102-01M SIPMOS FUJI POWER MOS-FET N-CHANNELSILICON POWER MOS-FET — - - n Tt A r n i r ^ P A P -ll SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power
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2SK1102-01M
1102-01M
2SK series
FUJI FA SERIES
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PDF
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Untitled
Abstract: No abstract text available
Text: ICSSSTV16859 Integrated Circuit Systems, Inc. DDR 13-Bit to 26-Bit Registered Buffer Recommended Applications: • DDR Memory Modules • Provides complete DDR DIMM logic solution with ICS93V857 or ICS95V857 • SSTL_2 compatible data registers Q13A Q12A Q11A
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Original
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ICSSSTV16859
13-Bit
26-Bit
ICS93V857
ICS95V857
ICSSSTV16859yK
0003G--05/21/02
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PDF
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TRANSISTOR BQ20
Abstract: bq2010 cpi 200 w Ku
Text: BENCHMARQ b q 2 0 1 0 Gas Gauge IC Features General Description >• Conservative and repeatable measurement of available charge in rechargeable batteries T he bq2010 G as G auge IC is intended for battery-pack or in-system in sta lla tio n to m a in ta in an
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bq2010
120nA
16-pin
-150mV
-250mV
00030bD
TRANSISTOR BQ20
cpi 200 w Ku
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PDF
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Untitled
Abstract: No abstract text available
Text: & & P S T P T 9 6 9 3 WIDE INPUT VOLTAGE, JFET COMPARATOR SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS Common Mode Range -3.0 to +8.0 V Low Input Bias Current <100 pA Propagation Delay 1.5 ns max Low Offset ±25 mV Low Feedthrough and Crosstalk Differential Latch Control
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SPT9693
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PDF
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tt 2232
Abstract: EL2020 EL2232 EL2232CM EL2232CN MIL-I-45208A 40n80 dd03ds
Text: EL2232C é la n EL2232C te c HIGH PERFORMANCE ANAdOG INTEGRA“^ 60 MHz, Fast Settling. Dual Current back A mplifier " is : General Description Features > ' f a • 60 M H z —3 d B b a n d w id th , Ay = 1 • 50 M H z —3 d B b a n d w id th , Av = 2 • 3 m V o ffset v o ltag e
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500ft
EL2020
EL2232
EL2232C
0003G57
0003DSfl
tt 2232
EL2020
EL2232CM
EL2232CN
MIL-I-45208A
40n80
dd03ds
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PDF
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