Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
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TLCS-870/X
TMP88CH41NG
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41UG Revision History Date Revision 2007/7/24 1 First Release Table of Contents TMP88CH41UG 1.1 1.2 1.3 1.4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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TLCS-870/X
TMP88CH41UG
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Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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AT49BV802A
Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3405E
AT49BV802A
AT49BV802AT
AT49BV802AT-70CI
at49bv802a-70tu
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88F846UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/8 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88F846UG 1.1 1.2 1.3 1.4
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TLCS-870/X
TMP88F846UG
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88FH41UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/7 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88FH41UG 1.1 1.2 1.3 1.4
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TLCS-870/X
TMP88FH41UG
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1664t
Abstract: AT52BR1662T AT52BR1664T tba 790
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
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16-megabit
11/01/xM
1664t
AT52BR1662T
AT52BR1664T
tba 790
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lv8011
Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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1265E
01/00/xM
lv8011
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
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3582B
Abstract: AT49BV322D AT49BV322DT AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3582B
AT49BV322D
AT49BV322DT
AT49BV
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MSP430x12xx
Abstract: ADC12 MSP430 MSP430F1101 MSP430F11X1 SLAU049F
Text: MSP430x1xx Family User’s Guide 2006 Mixed Signal Products SLAU049F IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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MSP430x1xx
SLAU049F
DAC12
12-bit
MSP430x12xx
ADC12
MSP430
MSP430F1101
MSP430F11X1
SLAU049F
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496k
Abstract: AT49F008A-90TI AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Text: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word 16K Bytes Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks
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AT49F008A
AT49F8192A
1199F
04/01/xM
496k
AT49F008A-90TI
AT49F008AT
AT49F8192AT
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KCP12
Abstract: all kind of capasitor capasitor variable 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C621C0 SIK03
Text: MF768-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C621C0 Technical Manual S1C621C0 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF768-02
S1C621C0
S1C621C0
KCP12
all kind of capasitor
capasitor variable
60N01
E0C6001
E0C6002
E0C6003
E0C6004
SIK03
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AT49LV040
Abstract: 496k AT49BV040 AT49LV040-70TC AT49BV040-12JC
Text: Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time – 10 seconds
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AT49BV/LV040
0679D
03/01/xM
AT49LV040
496k
AT49BV040
AT49LV040-70TC
AT49BV040-12JC
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Q13MC146
Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C62920 irf 560 7 SEGMENT DISPLAY 4511
Text: MF794-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C62920 Technical Manual S1C62920 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF794-03
S1C62920
S1C62920
Q13MC146
60N01
E0C6001
E0C6002
E0C6003
E0C6004
irf 560
7 SEGMENT DISPLAY 4511
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0802A
Abstract: 0802A LCD Y208 0002C y204 y205 1ff18 0FF58 Diode Mark ON A16
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16664 144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM DESCRIPTION The µ PD16664 is a column (segment) driver with internal RAM and can drive a full-dot LCD. Equipped with 144/160/184/208-output pins and a display RAM of 208 x 160 x 2 bits, this driver can display any of four gray levels
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PD16664
144/160/184/208-OUTPUT
PD16664
25-level
PD16667,
0802A
0802A LCD
Y208
0002C
y204
y205
1ff18
0FF58
Diode Mark ON A16
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Untitled
Abstract: No abstract text available
Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel
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28F016SA
28F008SA
56-Lead,
28F016SA
28F032SA
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Untitled
Abstract: No abstract text available
Text: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp
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28F016XS
16-MBIT
28F008SA
128-Kbyte
56-Lead
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Untitled
Abstract: No abstract text available
Text: in te l A P iM ! O M IR S K E fflA T r iK S lR ] DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ 70 ns Maximum Access Time ■ 0.43 MB/sec Write Transfer Rate
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DD28F032SA
32-MBIT
28F016SA
56-Lead,
DD28F032SA
32-Mbit
3-30i
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Untitled
Abstract: No abstract text available
Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in
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HYCFLF16008
x8/x16
16Mbit
00031flfl
1FC08-01-MAR96
4Li750flfl
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Untitled
Abstract: No abstract text available
Text: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
4fl2bl75
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