000010H0 Search Results

R5F6411FDFN

Contextual Info: R32C/111 Group Datasheet Datasheet R32C/111 Group RENESAS MCU 1. R01DS0062EJ0130 Rev.1.30 Mar 3, 2014 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

M29W640DB

Abstract: M29W640D M29W640DT A0-A21 6A000
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns

Contextual Info: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

SST32HF1621C

Abstract: SST32HF1641 SST32HF1641C SST32HF1681 SST32HF3241 SST32HF3241C SST32HF3281
Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 SST32HF1621C / SST32HF1641C / SST32HF3241C SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES:

SST32HF324C

Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF324C SST32HF324C32Mb Flash + 4Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemory organized as: – 2M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations

555H

Abstract: SST34HF3244
Contextual Info: 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF3244 / SST34HF3282 / SST34HF3284 SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent

SST39VF6401B-70-4C-EKE

Abstract: SST39VF6401B 555H SST39VF6402B SST39VF640xB
Contextual Info: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

SST32HF1622C

Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1622C SST32HF16x2x / 32x2x / 6482x16/32/64Mb Flash + 4/8Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF1622C: 1M x16 Flash + 128K x16 SRAM

M29DW324D

Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

SST36VF3203

Abstract: 555H BKX555H SST36VF3204 ba4932
Contextual Info: 32 Mbit x8/x16 Concurrent SuperFlash SST36VF3203 / SST36VF3204 SST36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 2M x16 or 4M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Bottom Sector Protection

M29W320E

Abstract: M29W320EB M29W320ET TFBGA48
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

IS1651

Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

SST32HF3282

Abstract: SST32HF1642 SST32HF1642C SST32HF1682 SST32HF3242 SST32HF3242C
Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1642 / SST32HF1682 / SST32HF3242 SST32HF3282 / SST32HF1642C / SST32HF3242C SST32HF16x2x / 32x2x / 6482x16/32/64Mb Flash + 4/8Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories EOL Data Sheet FEATURES:

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read ■ – VPP =12 V for Fast Program (optional) ACCESS TIME: 90 ns

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Be 555

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

Contextual Info: S29JL032J 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion