0.8 MICRON CMOS PROCESS FAMILY Search Results

nec 2561 equivalent

Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such

1.2 Micron CMOS Process Family

Abstract: 0.8 Micron CMOS Process Family CMOS Process Family 08um
Contextual Info: 0.8 Micron CMOS Process Family  October 1995 Features • • • • • Process Parameters Double Poly/Double Metal 1.7µm Poly and 2.1µm Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuction Option for prototype Description

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

34992

Abstract: SSC5100 F232-10 pinpad 78568
Contextual Info: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20

Contextual Info: ACT 3 Field Programmable Gate Arrays Preliminary Features Description • The ACT 3 family, based on Actel’s proprietary PLICE antifuse technology and 0.8-micron double-metal, double-poly CMOS process, offers a high-performance programmable solution

Contextual Info: h /99, æ & c M ! ACT 3 Field Programmable Gate Arrays Features Preliminary Description 10 ns Clock-to-Output Times The ACT 3 family, based on Actel’s proprietary PLICE antifuse technology and 0.8-micron double-metal, double-poly CMOS process, offers a high-performance programmable solution

pioneer PAL 005 A

Abstract: K1603 FPGA 144 CPGA 172 PLCC ASIC VKS FPGA CQFP 106 8-bit interfacing ic 7447 AVNET uto 512 of 16-1 multiplexer BPW 40 pin connection in circuit
Contextual Info: ACTLSOOl ACT 3 Field Programmable Gate Arrays Features Description • The ACT 3 family, based on Actel’s proprietary PLICE antifuse technology and 0.8-micron double-metal, double-poly CMOS process, offers a high-performance programmable solution capable of 167 MHz on-chip performance and 7.5 nanosecond

SLA1024

Abstract: SLA1081 SLA1039 SLA1029
Contextual Info: S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS • DESCRIPTION The SLA10000 Series is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 10 arrays ranging from 8,000 to 101,800 usable gates

SLA1024

Contextual Info: SbE » S-n 0 S S Y S T E M S INC • 7 c13E tîDtl D D D 1 S 3 E SfiM « S U O SLA10000L Series HIGH SPEED LOW POWER CMOS GATE ARRAYS ■ DESCRIPTION The S-MOS SLA1OOOOL series is a family of sea-of-gates high speed gate arrays manufactured on S-MOS’ stateof-the-art 0.8 micron double-metal Silicon gate CMOS process. The series consists of 11 arrays ranging from

SLA1029

Contextual Info: S-M 0 S SYSTEMS 31E D INC • 7S 32e 0e! Q00DSÖ3 1 BISMO S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS - r - i£ ■ w /~ ô j DESCRIPTION The S U M 0000 Series Is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists o f 10 arrays ranging from 8,000 to 101,800 usable gates

0.6 um cmos process

Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option

P-MOSFET

Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage

TTL 740 NAND propagation delay

Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
Contextual Info: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 4 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 8 µm Poly and Metal Pitch 10 Volts Maximum Operating Voltage 15 Volts High Voltage Option Isolated Vertical PNP Bipolar Module Low TCR Resistor Module

CMOS Process Family

Abstract: Dalsa
Contextual Info: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact

p-mosfet

Abstract: Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters
Contextual Info: 4 Micron CMOS Process Family  June 1995 Process Parameters Features 4µm 4µm • Double Poly / Double Metal • 8 µm Poly and Metal Pitch • 10 Volts Maximum Operating Voltage Metal I pitch width/space 4/4 4 /4 µm • 15 Volts High Voltage Option

P-MOSFET

Abstract: mosfet 4800
Contextual Info: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage

CMOS Process Family

Abstract: 2412AN
Contextual Info: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage

CMOS Process Family

Abstract: 1.5um cmos process family
Contextual Info: 1.5 Micron CMOS Process Family  February 1996 Features Technology Outline • • • • • • • • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option 1.2 Volts Very Low Voltage Option 5.5 Volts Maximum Operating Voltage Double Poly / Double Metal

DIGITAL GATE EMULATOR USING 8085

Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S

1.2 micron cmos

Abstract: 1.2 Micron CMOS Process Family 12-micron CMOS Process Family
Contextual Info: 1.2 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 2.4 µm Poly and Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuctionTM Option for prototypes Standard Cell Library

1.2 Micron CMOS Process Family

Abstract: CMOS Process Family 5-Micron-CMOS-Process 1.5um cmos process family 0.6 um cmos process
Contextual Info: 1.5 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 1.5µm Process Parameters 5volts & 3volts

cmos transistor 0.35 um

Abstract: 0.6 um cmos process transistor BIPOLAR
Contextual Info: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact