0.65MM Search Results

EXC14CE900U

Abstract: EXC14CE900 EXC14CG EXC14 EXC-14C
Contextual Info: Common mode Noise Filters Common mode Noise Filters Type: EXC14CG EXC14CE • Features ■ Recommended Applications ● Small size and low-profile （L 0.85mm҂W 0.65mm҂H 0.45mm） ● Filtering the noise of high-speed differential signaling lines and minimizing deformations of transmitted signal

Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SYKQWDF ATTENTION Super Bright Yellow White OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Super Bright Yellow device is made with AlGaInP on

APH1608YC

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APH1608YC Description Features z1.6mmX0.8mm SMT LED, 0.65mm THICKNESS. zLOW POWER CONSUMPTION. zWIDE VIEWING ANGLE. zIDEAL The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light

APTB1612SURKQBDC-F01

Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKQBDC-F01 Hyper Red Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with AlGaInP

CL21B333KBANNNC

Contextual Info: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21B333KBANNNC 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21B333KBANNNC 0805/2012 0.65mm X7R 33nF ± 10 % 50

Contextual Info: 3.3V CMOS SINGLE INVERTER GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range o f - 4 0 ° C to + 8 5 °C Vcc = 3.3V ± 0.3V, Normal Range

Contextual Info: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O J m ï ï ., D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C

Contextual Info: 3.3V CMOS HEX INVERTER WITH OPEN-DRAIN OUT­ PUTS, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - IDT74LVC05A ADVANCE INFORMATION 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and

Contextual Info: 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3STATE OUTPUTS, 5 VOLT TOLERANT I/O, BUS-HOLD FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP,

Contextual Info: 3.3V CMOS HEX INVERTER WITH 5 VOLTTOLERANT I/O FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages

Contextual Info: 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-NAND GATE, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages

Contextual Info: IDT74LVCU04A ADVANCE INFORMATION 3.3V CMOS HEX INVERTER WITH 5 VOLT TOLERANT I/O FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and

Contextual Info: _ irr R i D E S C R IP T IO N : FEATURES: This quadruple 2-input positive-AND gate is built using advanced - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; - > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch S S O P and

Contextual Info: 3.3V CMOS 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER, WITH ADDRESS LATCHES FEATURES: - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.635mm pitch QSOP, 0.65mm pitch SSOP, 0.65mm pitch TSSOP packages

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-AND GATE WITH 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 4 0 ° C to +85°C

Contextual Info: 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP, 0.635mm pitch QSOP, 0.65mm pitch TSSOP packages

Contextual Info: 3.3V CMOS SINGLE POSITIVE-EDGETRIGGERED D-TYPE FLIP-FLOP FE A T U R E S : - D E S C R IP T IO N : 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch P SO P package Extended commercial range of - 40° C to + 85° C

Contextual Info: 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS IDT74ALVC126 ADVANCE INFORMATION DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and

jedec package MO-220 vggc

Abstract: MO-220
Contextual Info: Package Outline 16-Lead QFN Package Outline K6 4.00x4.00mm body, 1.00mm height (max), 0.65mm pitch D2 D 16 Note 1 (Index Area D/2 x E/2) 16 1 1 e Note 1 (Index Area D/2 x E/2) E E2 b View B Top View Bottom View Note 3 θ L A A3 Seating Plane A1 L1 Note 2

ultra low igss pA

Abstract: CSD23201W10
Contextual Info: P-Channel CICLON NexFET Power MOSFETs CSD23201W10 Product Summary Features • Ultra Low Qg & Qgd D  Small Footprint D VDS -12 V Qg 1.8 nC Qgd  Low Profile 0.65mm height G  Pb Free S RDS on  Gate ESD Protection – 3kV nC 110 m VGS=-2.5V

red green bi-color LED super bright

Abstract: APTB1612ESGC-F01
Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612ESGC-F01 High Efficiency Red Super Bright Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The High Efficiency Red source color devices are made with z Bi-color,low power consumption.

APTB1612

Abstract: APTB1612SURKCGKC-F01
Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Description Features z 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. z BI-COLOR,LOW POWER CONSUMPTION. z WIDE VIEWING ANGLE. The Hyper Red source color devices are made with DH

Contextual Info: CERAMIC SMD ULTRA MINIATURE CONTOUR MODE QUARTZ CRYSTAL ABM8L Pb RoHS Compliant 3.2 x 2.5 x 0.65mm | | | | | | | | | | | | | | | FEATURES: APPLICATIONS: • Low frequencies in a Low height and Ultra Miniature Package • Ceramic package and metal lid assures high reliability

APTB1612SURKSGC-F01

Contextual Info: 1.6x1.25mm BI-COLOR SMD CHIP LED LAMP APTB1612SURKSGC-F01 HYPER RED SUPER BRIGHT GREEN Description Features 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. The Hyper Red source color devices are made with DH BI-COLOR,LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode.