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    0.25-UM CMOS STANDARD CELL LIBRARY Search Results

    0.25-UM CMOS STANDARD CELL LIBRARY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    0.25-UM CMOS STANDARD CELL LIBRARY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bsim3 model

    Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
    Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications


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    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    CMOS

    Abstract: No abstract text available
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    NMOS depletion pspice model

    Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    design an 8 Bit ALU using VHDL software tools -FP

    Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
    Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,


    Original     		PDF 8051TM 10Kx16-bit design an 8 Bit ALU using VHDL software tools -FP AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PDF PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70

    ARM1136J-S

    Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
    Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific


    Original     		PDF BCE0032A S-167 BCE0032B ARM1136J-S ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		PDF covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35-micron MOS RM3

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


    OCR Scan     		PDF MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer


    OCR Scan     		PDF MB62XXXX MB60XXXX FPT-160PM01) 40-LEAD DIP-40P-M01) 54JTYP 40006S-1C

    Pioneer SSA 40

    Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
    Text: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible


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    TSC500

    Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
    Text: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories


    OCR Scan     		PDF TSC500 64-mA TP000LJ TP006LJ TP008LJ TP009LJ TP010LJ 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068

    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


    OCR Scan     		PDF VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology

    H7442

    Abstract: Matra-Harris Semiconductor
    Text: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL


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    MQFPL160

    Abstract: No abstract text available
    Text: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured


    OCR Scan     		PDF OAI22 MQFPL160

    IMI7340

    Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
    Text: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections


    OCR Scan     		PDF IMI7000 IMI7340 IMI7160 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620

    CMOS-10

    Abstract: f-002
    Text: CMOS-10 2.5-Volt, 0.25-M icron drawn CMOS G ate Array NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Tape BGA and Chip Size Package Description In CMOS-IO, NEC combines high-performance CMOS technology with an advanced 2.5-volt block library and an


    OCR Scan     		PDF CMOS-10 IEEE1394 G1GSG77 f-002

    Untitled

    Abstract: No abstract text available
    Text: Logic Cell A rray M 2 0 6 4 /M 2 0 1 8 Features/Benefits • CMOS programmable Logic Cell Array LCA for replacement of standard logic • Completely reconfigurable by the user in the final system • High performance equivalent to TTL SSI/MSI - 33 MHz flip-flop toggle rate (-33 speed grade)


    OCR Scan     		PDF M2064 M2018

    PT6005

    Abstract: VSC300
    Text: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith


    OCR Scan     		PDF 32bfl VSC300 PT6005

    Untitled

    Abstract: No abstract text available
    Text: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon


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