0.22J Search Results

Contextual Info: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling

HYM533400

Contextual Info: HYM533400 M-Series HYUNDAI 4M x 33-bit CMOS DRAM MODULE DESCRIPTION The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each

Contextual Info: •HYUNDAI HYM584000B Series SEMICONDUCTOR 4M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION Tìie HYM584000B is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22jiFdecoupling capacitors are mounted under each DRAMs.

HYM536120

Contextual Info: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling

Contextual Info: HYM540A410 M-Series •HYUNDAI 4M x 40-bit C M O S DRAM MODULE P R ELIM IN A R Y DESCRIPTION The HYM540A410 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5117400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for

hy51v18164b

Contextual Info: "HYUNDAI HYM5V32124A X-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM5V32124A i s a l M x 32-bit E D O mode C M O S DRAM module consisting of two HY51V18164B in 44/50 pin TSO PII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is

Contextual Info: »HYUNDAI HYM572A404A N-Series 4M X 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5116404A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22jiF

HYM532124

Abstract: HY5118164B 1DC02-10-FEB
Contextual Info: •HYUNDAI HYM532124 X-Series 1M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION TTie HYM532124 is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted

686 6K tantalum

Abstract: capacitor 684k MATSUO 281 202L3502
Contextual Info: m r SOLID-ELECTROLYTE TANTALUM CAPACITORS* MATSUO A CAUTIONS •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. ■This catalog is designed for providing general information. Please

Contextual Info: LM 49321 LM49321 Audio Sub-System with Stereo DAC, Mono Class AB Loudspeaker Am plifier, OCL/SE Stereo Headphone O utput and RF Suppression Te x a s In s t r u m e n t s Literature Number: SN AS457B t Sem iconductor August 31, 2009 B O O m r Audio Power Am plifier Series

LT1587-3.3 equivalent

Contextual Info: r r LT1584/LT1585/LT1587 TECHNOLOGY 7A, 4.6A, 3A Low Dropout Fast Response Positive Regulators Adjustable and Fixed w m . F€fflUR€S D€SCRIPTK>n • Fast Transient Response ■ Guaranteed Dropout Voltage at Multiple Currents The LT 1584/LT1585/LT1587 are low dropout threeterminal regulators with 7A, 4.6A and 3A output current

Contextual Info: 3T357Û3 GENNUM C O R P O R A T I O DDG3T21 2TT • GENLINX GS9000S Serial Digital Decoder INJ DATA SHEET FEATURES DEVICE DESCRIPTION • fully compatible with SMPTE 259M The G S9000S is a CMOS in te g ra te d c irc u it s p e c ific a lly • decodes 8 and 10 bit serial digital signals for

Contextual Info: Si GEC P L E S S E Y o c t o b e r i 995 SE M IC OND UC TOR S DS4271-2.2 T F 2 1 9 .B FAST SWITCHING THYRISTOR APPLICATIONS KEY PARAMETERS v DRM 2000V 190A ^T RMS 1200A ^TSM dV/dt 200V/(is dl/dt 500A/|is 40jis • High Power Inverters And Choppers. ■ UPS.

RCD snubber

Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
Contextual Info: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster

Contextual Info: f lX IL IN X Virtex 2.5 V Field Programmable Gate Arrays November 9 ,1 9 9 8 Version 1.1 - ADVAN CE Product Specification Features • • • • • • Fast, high-density Field-Programmable Gate Arrays - Densities from 50k to 1M system gates - System performance up to 200 MHz

Contextual Info: unw> TECHNOLOGY MO Final E le c trica l S p e c ific a tio n s LTC1262 12v, 30m A Flash M em ory Program m ing Supply April 1994 F€flTUR€S DCSCftlPTIOn • Regulated 12V ±5% Output Voltage ■ No Inductors ■ Supply Voltage Range: 4.75V to 5.5V ■ Guaranteed 30mA Output

MAX843

Contextual Info: 19-0388; Rev 0; 4/95 V M y J X IV M Low-Noise, Regulated, -2V GaAsFET Bias The MAX840 offers both a -2V preset output and a -0.5V to -9.4V a d ju stab le output. The M AX843/M AX844 use an external positive control voltage to set the negative output voltage. Input voltage range for all the devices is

7555 timer

Abstract: icl 7555 icl7103 CMOS 7555 71C03 ICL71C03ACPI standard cmos 4000 series AN023 BCD to Decimal decoder nixie ICL71C03CPI
Contextual Info: ICL8052/ICL71C03, ICL8068/ICL71C03 HARRIS S E M I C O N D U C T O R Precision 4V 2 Digit, A/D Converter August 1997 Features Description • Typically Less Than 2|j.Vp_p Noise 200.00m V Full Scale, ICL8068 The ICL8052 or ICL8068/ICL71C03 chip pairs with their

0J02

Contextual Info: SBE D EUPEC 3m]32*i7 Ü Q Q ü S n IDG « U P E C T 600 F • ^ Z S -v Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm

LM391 equivalent

Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Contextual Info: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity

Contextual Info: SM28512/28512F 4MBit 512K x 8 CMOS SRAM Modules General Description Features The SM28512/28512F are high performance, 4-megabit static RAM modules organized as 512K words by 8 bits, in either a 35-pin, single-in-line (SEP) package or a 35-pin, horizontal SIP package (FSIP).

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit

Contextual Info: SHIELDED INDUCTORS i! 2 - PF SERIES • Electromagnetic shield ■ Performance per MlL-C-15305! ■ Mil-grade performance at commercial-grade prices due to automated production ■ Delivery from stock refer to p. 5 ■ Tape & Reel packaging available ■ Standard inductance tolerance is ±10%

DIAGRAM OF IC 7106

Abstract: L7126 IC 7107 Pin diagram CL7107 UM 7106 tcl7106 L7106 ICL 7107 Application Notes IC 7107 40 pins Digital amp. meter with 7107
Contextual Info: > k iy jx i> k i 3A 1 D ig it A /D C onverter _F eatu res ♦ Improved 2nd Sourcel See 3rd page for “Maxim Advantage'“” ♦ Guaranteed first reading recovery from overrange ♦ On board Display Drive Capability— no external