0.2 FS10 Search Results

FS100KMJ-03F

Abstract: 50a 30v MOSFET
Contextual Info: MITSUBISHI Nch POWER MOSFET FS100KMJ-03F HIGH-SPEED SWITCHING USE FS100KMJ-03F OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀➁➂

FS10KM-2

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KM-2 HIGH-SPEED SWITCHING USE FS10KM-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡10V DRIVE

FS10AS-2

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10AS-2 HIGH-SPEED SWITCHING USE FS10AS-2 OUTLINE DRAWING 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm q w e wr ¡10V DRIVE ¡VDSS . 100V

mosfet vgs 5v 5a

Abstract: FS10AS-06
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10AS-06 HIGH-SPEED SWITCHING USE FS10AS-06 OUTLINE DRAWING 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm q w e wr ¡10V DRIVE ¡VDSS . 60V

FS10KMA-4A

Contextual Info: MITSUBISHI Nch POWER MOSFET ^ FS10KMA-4A soW HIGH-SPEED SWITCHING USE FS10KMA-4A OUTLINE DRAWING Dimensions in mm 2.8 ± 0.2 10 ± 0.3 3.2 ± 0 .2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0 .1 5 2.5 4 ± 0 .2 5 / I —0 / CD D \ h \ 2.6 ± 0.2 2 .5 4 ± 0 .2 5

FS10KM

Abstract: FS10KM-9A
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-9A FS10KM-9A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-9A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

FS10KM-12A

Abstract: fs10km 200v 5A mosfet power Diode 400V 20A mosfet 10a 600v
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-12A FS10KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS10KMA-5A

Abstract: mosfet vgs 5v 5a
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KMA-5A FS10KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

fs10KMA

Abstract: FS10KMA-5A
Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS10KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS10KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OAS-3 HIGH-SPEED SWITCHING USE FS1 OAS-3 OUTLINE DRAWING Dimensions in mm 6.5 5.0 1 0.2 -h 1J 0.5 1 0.2 0.8 C /n ? n q w e Q w r q w e r h 10V DRIVE V d s s .15 0 V

FS10KM12

Abstract: FS10KM-12 P channel 600v 5A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-12 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 Vd s s 2.8 ± 0.2 . 6 0 0 V rDS ON (MAX) . 0 .9 4 Í2

FS10KM-10

Abstract: 710a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2

FS10KM6

Abstract: FS10KM-6 C3102
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-6 HIGH-SPEED SWITCHING USE FS10KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s .3 0 0 V rDS ON (MAX) . 0.68Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-6 HIGH-SPEED SWITCHING USE FS10KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0 3 2,8 t 0.2 w •ig ¿ • V d s s . 300V GATE DRAIN SOURCE • rDS ON (MAX) .0.680

Contextual Info: FS10ASJ-3 High-Speed Switching Use Nch Power MOS FET REJ03G1409-0200 Previous: MEJ02G0078-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 150 V rDS(ON) (max) : 160 mΩ ID : 10 A Integrated Fast Recovery Diode (TYP.) : 90 ns

FS100KMJ-03F

Abstract: FS100KMJ-03F-A8
Contextual Info: FS100KMJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0253-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : 30 V rDS ON (max) : 4.0 mΩ ID : 100 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns

Contextual Info: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns

FS10ASJ-06F

Abstract: FS10ASJ-06F-T13
Contextual Info: FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0241-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : 60 V rDS ON (max) : 70 mΩ ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline

S1037

Contextual Info: FS10AS-3 High-Speed Switching Use Nch Power MOS FET REJ03G1407-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 10 V VDSS : 150 V rDS ON (max) : 170 mΩ ID : 10 A Integrated Fast Recovery Diode (TYP.) : 100 ns Outline RENESAS Package code: PRSS0004ZG-A

Contextual Info: FS10ASJ-3 High-Speed Switching Use Nch Power MOS FET REJ03G1409-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : 150 V rDS ON (max) : 160 mΩ ID : 10 A Integrated Fast Recovery Diode (TYP.) : 90 ns Outline RENESAS Package code: PRSS0004ZG-A

FS10AS-2

Abstract: FS10AS-2-T13
Contextual Info: FS10AS-2 High-Speed Switching Use Nch Power MOS FET REJ03G0244-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 10 V VDSS : 100 V rDS ON (max) : 0.23 Ω ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline

FS10ASJ-06F

Abstract: FS10ASJ-06F-T13 PRSS0004ZG-A
Contextual Info: FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0241-0200 Rev.2.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : 60 V rDS ON (max) : 70 mΩ ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline

Contextual Info: FS10AS-06 High-Speed Switching Use Nch Power MOS FET REJ03G0240-0200 Rev.2.00 Dec 19, 2008 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS ON (max) : 78 mΩ ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Outline

FS10VS-9A

Abstract: FS10VS-9A-T11
Contextual Info: FS10VS-9A High-Speed Switching Use Nch Power MOS FET REJ03G0268-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 450 V rDS ON (max) : 0.73 Ω ID : 10 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain