0.18 UM CMOS PROCESS Search Results

PCN0514

Abstract: epcs16n EPCS64N EPCS1SI8N marking EPCS4SI8N altera epcs16n 7B223 EPCS64SI16N marking code V5 z213x
Contextual Info: PROCESS CHANGE NOTIFICATION PCN0514 REV 2 MANUFACTURING CHANGES ON EPCS FAMILY Change Description: This is a revision to PCN0514, which was released in September 2005. The serial configuration device family will undergo manufacturing changes relating to process geometry and adding fabrication and assembly sites, as

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

71V3558

Abstract: 71V2557
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0105-01 DATE: 5/14/01 Product Affected: ZBT Product Family - Refer to attached list of part #'s. Manufacturing Location Affected: N/A

Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Contextual Info: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes

0.18 um CMOS Spiral Inductor technology

Abstract: TSMC+rf+cmos+0.18+um
Contextual Info: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •

"RGB to YCbCr"

Abstract: RGB to YCbCr converter ADCC-3000 cmos IMAGE SENSOR xenon RGB line sensor array CCIR-656 "1.3 megapixel" cmos image sensor
Contextual Info: ADCC-3000 Landscape 1.3 Megapixel 1/4” CMOS Image Sensor Product Brief Description Features The Avago ADCC-3000 is an advanced, low power 1.3 megapixel SXGA image sensor with an integrated image processor. The CMOS image sensor and image processing pipeline delivers images data formats ready

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SR0008-03 DATE: Product Affected: 71V416S/L, 71V424S/L, 71V428S/L Manufacturing Location Affected: Date Effective: 11/20/00 Contact:

ARM1136J-S

Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Contextual Info: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

71016s

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:

servo track

Abstract: hdd dsp SD5210 176pin
Contextual Info: SD5210 Integrated Processor/DSP HDD Platform Device • FEATURES - - • - - - • Clock control - Writeable control store WCS -based sequencer included Supports headerless operation 8-bit Non-Return-to-Zero (NRZ) interface supporting data rates up to 450 Mbit/s

MAX77100

Abstract: IC74 IC-74
Contextual Info: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76

XH018

Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
Contextual Info: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.

blood pressure circuit schematic

Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
Contextual Info: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:

philips tea 1090

Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

pal 012 a

Abstract: PAL 012
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

philips tea 1090

Abstract: mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

PAL 0007

Abstract: PAL 007 B pal 002 PAL 007 E PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44
Contextual Info: Philips Sem iconductors Prelim inary specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CMOS design and process technologies The PZ3064 CPLD Complex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

philips tea 1090

Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
Contextual Info: Philips Sem iconductors Prelim inary specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CMOS design and process technologies The PZ3064 CPLD Complex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

MIC427AJ

Abstract: tl494 "analog devices" tl494 dc to ac ic428
Contextual Info: MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL7 CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be

MLD57

Abstract: MLD571 gift card
Contextual Info: CRO MLD571 ONE Lamp / LED Driver D ISCRIPTIO N The M LD57 ] are low power CMOS LSI in TO-92 package, designed for the application o f lamp and LED flash driver It can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

27C020

Abstract: 27C040 27C080 NM27P512 NSC800
Contextual Info: NM 27P512 524,288-B it 64K x 8 P rocessor O riented CM O S EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM con­ figured as 64k x 8 . It’s designed to simplify microprocessor interfacing while remaining compatible with standard