0.18 Search Results

2N3829

Contextual Info: TYPE 2N3829 P-N-P SILICON TRANSISTOR _ B U L L E T I N N O . D L -S 6 5 7 4 5 5 , M A R C H 1 96 5 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • High f r : 350 Me min at 10 v, 30 ma • Low Guaranteed VcE sat : 0.18 v at 30 ma * m echanical d ata

Contextual Info: 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 250 to 400 IC = 2.5 A • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) •

microphone connector

Contextual Info: 0.47 0.86 3/8-32 UNEF-2B THREAD 0.33 0.42 0.187 MAX CABLE NOTES: 0.31 1. MATERIALS: SCREW - STEEL, NICKEL PLATED HOUSING - BRASS, NICKEL PLATED SPRING - STEEL, NICKEL PLATED WASHER - PHENOLIC EYELET - BRASS, TIN PLATED COUPLING RING - NICKEL PLATED 2. ALL DIMENSIONS REFERENCE UNLESS OTHERWISE SPECIFIED.

60E-12

Abstract: NE68719 40E15
Contextual Info: NONLINEAR MODEL SCHEMATIC NE68719 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS 0.75 VAF 17 VJS IKF 0.18 MJS ISE 3.3e-15 FC 0.37

sihp22n6

Abstract: SiHP22N60E-GE3
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: NONLINEAR MODEL UPA844TC BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 8e-17 3.7e-17 MJC 0.53 0.18 BF 128 81 XCJC 1 0.5 NF 1 0.9944 CJS VAF 17 27.7 VJS 0.75 0.75 IKF 0.18 0.98 MJS ISE 3.3e-15 2.53e-10 FC 0.37 0.5 5e-12 NE 1.48 30 TF

C11040

Contextual Info: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21

SF0434BA03230S

Contextual Info: SF0434BA03230S SAW Filter 433.92 MHz SAW Bandpass Filter, 0.18 MHz Bandwidth • 5 x 5 mm Ceramic LCC Package, 8 Pads • RoHS Compliant These filters are manufactured on quartz, which provides optimal temperature performance and are available from 80 -1600 MHz. This TCRF is designed for narrowband IF filtering such as in satellite transponders, directional finders and

1206-8 chipfet

Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition

KDE1206PHV1

Abstract: KDE2406PHV1 KDE2406PHV2 kde1206phv2 KDE1206PHV3 Sunon KDE1206PHV2 KDE1206PHV2 MS.A.GN SUNON kde2406
Contextual Info: 60x60x15 mm MagLev Motor Fan 15~21 CFM Model P/N Rating Voltage Power Current Power Consumption Speed Air Flow Static Pressure Noise VAPO 2BALL VDC (AMP) (WATTS) (RPM) (CFM) (Inch-H2O) (dBA) (g) 12 12 12 24 24 0.13 0.08 0.05 0.08 0.05 21 18 15 21 18 0.18

565R

Contextual Info: 564R & 565R Series Vishay Cera-Mite High Voltage Ceramic Disc Capacitors 2 kVDC to 7.5 kVDC FEATURES Fig. 1 T max. 1.250" min. 32 D max. 0.187" (4.8) max. RoHS COMPLIANT APPLICATIONS LS Tinned Copper Leads • Low losses • High capacitance in small size

KC-301262

Abstract: 154-15720-E KC301
Contextual Info: Mini USB AB Type Receptable 154-15720-E 0.175 0.67 1.15 5.30 1.50 7.775 9.25 2.75 9.70 RECOMMENDED P.C. B LAYOUT COMPONENT SIDE P.C.B THICKNESS=0.80mm 0.40 0.26 6.90 Mini USB AB Type Receptacle 3.60 0.40 0.18 1.825 ø1.05 2.70 3.10 0.45 1.30 0.275 5.30 1.00

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

Contextual Info: TEH100 Series 100 Watt Thick Film Power Resistors for High Frequency and Pulse Loading Applications 0.610~0.630" 15.49~16.01mm 0.185~0.205" (4.69~5.21mm) 0.200~0.220" (5.07~5.59mm) ø0.139~0.147" (3.53~3.73mm) 0.080~0.140" (2.03~3.55mm) 0.520~0.620" (13.21~15.75mm)

IRL640

Abstract: SiHL640 SiHL640-E3
Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

TPS1100

Abstract: TPS1100D TPS1100DG4 TPS1100DR TPS1100DRG4 TPS1100PW TPS1100PWLE TPS1100Y
Contextual Info: TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 D D D D D D D Low rDS on . . . 0.18 Ω Typ at VGS = – 10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = – 1.5 V Max

Contextual Info: QCK5 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS 2 3 C L PIN 1 CATHODE PIN 2 ANODE 0.2200 C L PIN 3 EMITTER PIN 1 IDENTIFICATION PIN 4 COLLECTOR 4 1 0.527 C L C L 0.185 FEATURES 0.157 OPTICAL CL 0.020SQ 4X 0.015 0.100±0.005 0.280 • No contact switching

ADC1275X

Contextual Info: 0.18µ µ m 10-BIT 500KSPS ADC ADC1275X_PC GENERAL DESCRIPTION The ADC1275X_PC is a CMOS 3.3V 10-bit analog-to-digital converter ADC . It converts the analog input signal into 10-bit binary digital codes at a maximum conversion rate of 500KSPS with 2.5MHz clock.

HWD18

Abstract: HW012 HW443 HW068 HW524 HWD10 HWD11 HWD12 HWD16 HWD20
Contextual Info: 1/2 WATT METAL Value in Ohms 0.10 0.11 0.12 0.13 0.15 0.16 0.18 0.20 0.22 0.24 0.27 0.30 0.33 0.36 0.39 0.43 0.47 0.51 0.56 0.62 0.68 0.75 0.82 0.91 1.0 1.1 1.2 1.3 1.5 NTE Stock Number NTE Stock Number Value in Ohms HWD10 HWD11 HWD12 HWD13 HWD15 HWD16 HWD18

ADC1276X

Contextual Info: 0.18µ µ m 14-BIT 10MSPS ADC ADC1276X GENERAL DESCRIPTION The adc1276x is a CMOS 14bit analog-to-digital converter ADC . It converts the analog input signal into 14bit binary digital codes at a maximum sampling rate of 10MHz. The device is a monolithic ADC with an on-chip, high-performance, sample-and-hold Amplifier (SHA) and current

GENERAL SEMICONDUCTOR MARKING RJ

Abstract: marking code RB
Contextual Info: RS2A thru RS2K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier Reverse Voltage 50 to 800V Forward Current 1.5A DO-214AA SMB Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout 0.185 MAX.

36N60

Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

capacitor 10u 35V

Abstract: ADC1282X 8-bit adc msps
Contextual Info: ADC1282X 0.18µ µ m 8-BIT 125MSPS ADC GENERAL DESCRIPTION The adc1282x is a CMOS Nyquit Rate 8-bit A/D converter for high performance network applications. It is a Folding, Interpolation and Pipelined architecture. The maximum conversion rate of adc1282x is 125MSPS and supply voltage is 3.3V single.

ADC1295X

Contextual Info: ADC1295X 0.18µ µ m 8-BIT 800K ADC GENERAL DESCRIPTION The adc1295x is a CMOS 8bit A/D converter which combines an auto offset calibration comparator, high resolution R-string DAC, clock generator, 8bit successive approximation register SAR , output register, and AINC which