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    0-5 V TO 4-20 MA IC Search Results

    0-5 V TO 4-20 MA IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SZ07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7W66FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-765 (US8), 2 in 1, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SET125F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-25 (SMV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7WH125FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-505 (SM8), 2 in 1, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    0-5 V TO 4-20 MA IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Industrial Current/Voltage Output Driver with Programmable Ranges AD5750 FEATURES Current output ranges: 4 mA to 20 mA, 0 mA to 20 mA or 0 mA to 24 mA, ±20 mA, and ±24 mA ±0.03% FSR total unadjusted error TUE ±5 ppm/°C typical output drift Voltage output ranges: 0 V to 5 V, 0 V to 10 V, ±5 V, and ±10 V,


    Original     		AD5750 32-lead AD5750BCPZ-REEL71 CP-32-2 PDF

    TLP350

    Abstract: 20CG10 E67349 EN60747-5-2 tlp350 IGBT gate drive inverter
    Text: TLP350 Preliminary TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		TLP350 TLP350 UL1577 20CG10 E67349 EN60747-5-2 tlp350 IGBT gate drive inverter PDF

    82C11

    Abstract: 82C16 82C25 82c12 82c56 l41 marking code 82C25 CAN 82C62 82C28 l33 marking sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 4 3 „ DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is


    Original     		82CXX 82CXX OT-23 OT-25 100ppm/° QW-R119-010 82C11 82C16 82C25 82c12 82c56 l41 marking code 82C25 CAN 82C62 82C28 l33 marking sot23 PDF

    82C12

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 3 3 „ DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is


    Original     		82CXX 82CXX OT-23-3 OT-23 O-236) SC-59) 100ppm/Â OT-89 OT-25 QW-R119-010 82C12 PDF

    82c45

    Abstract: 82C18
    Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 3 3  DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is


    Original     		82CXX 82CXX OT-23-3 OT-23 O-236) SC-59) 100ppm/Â OT-89 OT-25 QW-R119-010 82c45 82C18 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 3 3 „ DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is


    Original     		82CXX 82CXX OT-23-3 OT-23 O-236) SC-59) 100ppm/Â OT-25 QW-R119-010 PDF

    TLP351 VDE

    Abstract: TOSHIBA IGBT DATA BOOK EN60747-5-2 TLP351 ac hight power led light circuit
    Text: TLP351 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter Unit: mm The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package.


    Original     		TLP351 TLP351 TLP351 VDE TOSHIBA IGBT DATA BOOK EN60747-5-2 ac hight power led light circuit PDF

    8X SOT23-5

    Abstract: RP200Q
    Text: 3-MODE 300mA LDO REGULATOR RP200x SERIES NO. EA-182-080911 Preliminary OUTLINE The RP200x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy and low supply current. These ICs perform with the chip enable function and realize a standby mode with ultra low supply


    Original     		300mA RP200x EA-182-080911 RP200x08xx RP200x18xx RP200x28xx RP200x40xx 8X SOT23-5 RP200Q PDF

    NE661M05

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz


    Original     		NE661M05 NE661M05-T1 PU10323EJ02V0DS NE661M05 PDF

    NE662M03

    Abstract: k 2545 NE662M03-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and high-frequency oscillation NF = 1.2 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		NE662M03 NE662M03-T1 PU10324EJ02V0DS NE662M03 k 2545 NE662M03-T1 PDF

    IC-520

    Abstract: of msg NESG2031M16 NESG2031M16-T3 NESG2031M16-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		NESG2031M16 NESG2031M16-A M8E0904E IC-520 of msg NESG2031M16 NESG2031M16-T3 NESG2031M16-T3-A PDF

    E67349

    Abstract: TLP350 igbt control circuit for induction heating
    Text: TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		TLP350 TLP350 E67349 igbt control circuit for induction heating PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz


    Original     		NESG3031M14 NESG3031M14-A NESG3031M14-T3-A PDF

    PS9821-2

    Abstract: NL251 EN60747-5-2 PS9821-1 VDE0884 PS9821-2-A
    Text: NEC's HIGH CMR , 15 Mb/s 3.3 V OPEN COLLECTOR PS9821-1/-2 OUTPUT TYPE SO8 OPTOCOUPLER DESCRIPTION PIN CONNECTION NEC's PS9821-1 and PS9821-2 are active-low type Top View high-speed photocouplers that use a GaAlAs light-emitting diode on the input side and a photodetector IC that includes


    Original     		PS9821-1/-2 PS9821-1 PS9821-2 PS9821-1 PS9821-1, PS9821-2 NL251 EN60747-5-2 VDE0884 PS9821-2-A PDF

    F0007

    Abstract: MB3891 MB3891PFV
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all


    Original     		DS04-27801-1E MB3891 MB3891 F0007 MB3891PFV PDF

    4856a

    Abstract: 2n4856a 2N485
    Text: Tem ic 2N4856A/4857A/4858A S e m i c o n d u c t ors N-Channel JFETs Product Summary Part Number VQS off 2N4856A - 4 to - 10 -4 0 50 25 5 4 2N4857A - 2 to - 6 -4 0 20 40 5 4 2N 4858A -0 .8 to - 4 -4 0 8 60 5 4 (V) loss Min (mA) V(BR)GSS Min (V) Features iDSjon) Max


    OCR Scan     		2N4856A/4857A/4858A 2N4856A 2N4857A S-52424-- l4-Apr-97 S-52424--Rev. 14-Apr-97 4856a 2N485 PDF

    Untitled

    Abstract: No abstract text available
    Text: ASI 2N6515 SILICON NPN TRANSISTOR DESCRIPTION: The 2N6515 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO-92 _ . 2 0 5 15 20 . 175 4 45) DIA. MAXIMUM RATINGS lc 500 mA V ce 250 V . .2 1 0 (5 33) .1 7 0 (4 32)


    OCR Scan     		2N6515 2N6515 PDF

    2N5554

    Abstract: 2N4856A 4857A 4856a sot23 fd
    Text: Tem ic 2N4856A/4857A/4858A Siliconix N-Channel JFETs Product Summary P a rt N u m b e r V g S oB (V) V(BR)GSS M in (V) I d ss M in (mA) r DS(on) M ax (Û ) lö(off) lÿ p (pA) to N iy p (ns) 2N4856A - 4 to - 1 0 -4 0 50 25 5 4 2N4857A —2 to - 6 -4 0 20


    OCR Scan     		2N4856A/4857A/4858A 2N4856A 2N4857A 2N4858A P-37406--Rev. 2N4856A 2N48S7A 2N4858A 2N5554 4857A 4856a sot23 fd PDF

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SCS-THOMSON A T# [»^2 iajOT Q«S TDE0160 PROXIMITY DETECTOR • SUPPLY VOLTAGE : + 4 TO + 36 V ■ SUPPLY CURRENT : < 1.2 mA ■ OUTPUT TRANSISTORS : I = 20 mA ; V ce (sat) < 1 1 0 0 mV ■ OSCILLATOR FREQUENCY : < 1 MHz ■ LOSS RESISTANCE : 5 TO 50 k i l


    OCR Scan     		TDE0160 IP-14/2 E0160 E016vs PDF

    SH100G

    Abstract: TDK tda
    Text: SIEMENS CDR 3300-00 High-Speed Clock and Data Recovery Bipolar 1C Preliminary Data Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range fro m -4 .0 V t o - 5 . 0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10“ 12


    OCR Scan     		SH100G-based 19Q8-Dfi-1Fi STM-16 P-TQFP-100-4 SH100G TDK tda PDF

    Untitled

    Abstract: No abstract text available
    Text: U 63 4 H 2 5 6 PowerStore A v a i l a b l e in Q 1 / 9 7 Features □ High-performance CMOS non­ volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,1 5 and 20 ns Output Enable Access Times □ Iqq=20 mA at 200 ns Cycle Time □ Automatic STORE to EEPROM


    OCR Scan     		M3015 PDF

    PC11760

    Abstract: No abstract text available
    Text: S G S - T H O M S O N k f o o M B iB lïœ iL iC T IïM D ! S E R IE S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA . VERY LOW DROPOUT VOLTAGE 0.4V . VERY LOW QUIESCENT CURRENT (TYP. 50 nA IN OFF MODE, 500 mA IN ON MODE) . OUTPUT CURRENT UP TO 500 mA


    OCR Scan     		0068772-B PC11760 PDF

    equivalent diode for 1n457

    Abstract: IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135
    Text: FAIRCHILD SEMICO NDU CTO R 3469674 04 F A IR C H IL D DE |34fc.citi74 0 0 H 7 4 S CI 4 SEM ICO NDU CTOR 84D 27459 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose


    OCR Scan     		PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137 625mW PN/FTS05135) PN/FTS05136/7) PN5142, PN5143 PN5135 equivalent diode for 1n457 IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135 PDF

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


    OCR Scan     		15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784 PDF