0/TRANSISTOR BG 23 Search Results

bg 22 transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK203-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

SOT540A

Abstract: 821 ceramic capacitor BLF861 data sheet BLF861
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Product specification Supersedes data of 2000 Feb 18 2000 May 23 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT540A • High power gain

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50X
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

BUK202-50X

Abstract: PowerMOS transistor TOPFET high side switch BUK202
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

LTC3810

Abstract: DC952A BAS19W Si7852DP ZXMN10A07F TP3-TP11 sis 964 100v boost
Contextual Info: DEMO CIRCUIT 952 QUICK STARTLTC3810 GUIDE LTC3810 Current Mode Synchronous Switching Regulator Controller DESCRIPTION Demonstration circuit 952 is a current mode synchronous switching regulator featuring the LTC3810. The circuit is configured as a synchronous step-down regulator operating at 230kHz

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50Y C6560
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

BU 103 A transistor

Abstract: transistor BG 23 0/transistor BG 23
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

BUK202-50Y

Abstract: PowerMOS transistor TOPFET high side switch
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

5V VSG MOSFET

Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

BUK201-50Y

Contextual Info: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYM BOL PARAMETER

K203

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured

Transistor Vb

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK202-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

MARKING SMD PNP TRANSISTOR

Abstract: PNP Epitaxial Silicon Transistor sot-23 BCX71G
Contextual Info: Transistors IC SMD Type General Purpose Transistor BCX71G SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 PNP Epitaxial Silicon Transistor 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: TPS5300 IMVP MOBILE POWER SUPPLY CONTROLLER SLVS334 – DECEMBER 2000 D Single-Chip Speed Step Solution D Hysteretic Controller Provides Fast D D D D D D D D D D D DRV_CLK VSENSE_CLK DT_SET ANAGND VSENSE_CORE SLOWST VREFB VHYST OCP DROOP IOUT PSM/LATCH IS–

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

pfe 225

Abstract: K203 EUK203-50X
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

10A 600 VOLT DIODE

Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
Contextual Info: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes

BUK202-50Y

Abstract: buk20250y
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured

Telefunken U 3082 M

Abstract: U3082M u175m U254B U244B U2066B U3088 TDSR 5150 pin tdsr 5150 U2097B
Contextual Info: TELEFUNKEN ELECTRONI C M4E D j^SQCHL. DOlliaT 2 B I A L GG Display Drivers ; , iT -S Z -O -* ! U 1 2 3 P • Photo pulse am plifier Features: • Integrated operational ampli­ fier and photo detector on one chip • External controlled photo sensitivity through R2 . 3

Contextual Info: Preliminary Datasheet 5-CHANNEL MOTOR DRIVER IC AZ9259 General Description Features The AZ9259 is a monolithic integrated circuit, and suitable for 5-channel motor driver which drives focus actuator, tracking actuator, sled motor, spindle motor and loading motor of VCD system.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured