0/K 2897 TRANSISTOR Search Results

tfk u 208 u

Abstract: TFK U 111 B tfk bav 21 TFK U 111 B 45A BU208 tfk 138 TFK BU209 BU209 BU 208 tfk u 111
Contextual Info: 'W BU 207 •BU 208 •BU 209 Sifizium-NPN-Leistungstransistoren Silicon NPN Power Transistors Anwendung : Application: Horizontal-Ablenk-Endstufen in Farbfernsehempfängern Horizontal deflection circuits in colour TV-receivers Besondere Merkmale: • Hohe Sperrspannung

TRANSISTOR CD 2897

Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Contextual Info: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared

SAS660

Abstract: MRF892
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MRF892 The RF Line 14 W 900 MHz RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . d e s ig n e d for 2 4 volt U H F la r g e -sig n a l, c o m m o n - b a s e a m p lifie r a p p lic a t io n s in in d u stria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g

H1163

Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
Contextual Info: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥

A12540

Abstract: a1-2540
Contextual Info: A R R H A -2 5 4 0 I S W ideband, Fast Settling Operational Amplifier August 1991 Features Description • V e ry H ig h S le w R a t e . 4 0 0 V / jjs The Harris H A -2 5 4 0 Is a wideband, very high slew rate,

Contextual Info: UCC2897 ą SLUS591G − NOVEMBER 2003 − REVISED DECEMBER 2008 ADVANCED CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Ideal for Active Clamp/Reset Forward, D D D D D D D D D D DESCRIPTION The UCC2897 PWM controller simplifies implementation of the various active clamp/reset

OP271 equivalent

Abstract: OP270
Contextual Info: Dual Very Low-Noise Precision Operational Amplifier 0P-270 ANALOG DEVICES □ FEATURES • Very Low Noise. 5nV/y Hz @ 1kHz Max • Excellent Input Offset Voltage. 75/iV Max • Low Offset Voltage Drift.1^V/°C Max

Vishay quality iso certificate

Abstract: opto d213 Vishay resistors quality iso certificate C22.2 NO.190 roederstein ESTA unbalance 3 phase load power factor correction 1000kVAr D-84030 estapact str 4512
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book ESTA High Voltage Power CAPAcitors vishay ESTA vsD-db0053-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

UCC2897PW

Contextual Info: UCC2897 ą SLUS591G − NOVEMBER 2003 − REVISED DECEMBER 2008 ADVANCED CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Ideal for Active Clamp/Reset Forward, D D D D D D D D D D DESCRIPTION The UCC2897 PWM controller simplifies implementation of the various active clamp/reset

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

LNK406

Abstract: LNK406EG snx-R1523 Philips CSV-RM8 bobbin RDR-194 XH004186 Lutron transformer rm8 Leviton dolph
Contextual Info: Title Reference Design Report for a High Efficiency ≥85% , High Power Factor (>0.9) TRIAC Dimmable 14 WTYP LED Driver Using LinkSwitch -PH LNK406EG Specification 90 VAC – 265 VAC Input; 28 VTYP, 0.5 A Output Application LED Driver Author Applications Engineering Department

Contextual Info: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

EP2C8F256 package

Abstract: S-2501-1 EP2C20F256 bga 896 TSMC 90nm sram
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.

bga 896

Abstract: TSMC 90nm sram EP2C50F484 APU 2471
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

EP2C5F256

Abstract: CII51001-3 EP2C15A EP2C20 EP2C35 EP2C50 EP2C8F256 EP2C70F672 TSMC 90nm sram
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.

Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.