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    0/BI 370 TRANSISTOR E Search Results

    0/BI 370 TRANSISTOR E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N914

    Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
    Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and


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    2N914 2N914 G-2030 bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030 PDF

    0DG02

    Contextual Info: 45E D ISOCO n C O M P O N E N T S LTD • HôôbSlO G0002S0 7 « I S O ~ V/-53 CNX 82AX .■ r» n ,|,i,.,„ j,j,- |.l lf. ,v v, r Æ tiliÆ .M», j- f e - 'f t m-Til1 H Heii'iid>' s'!'j a jl i òn i »/ ì ^ A r » ;ì in, I iv"-’- i k : ' ' y * } : * - Ì ■ »


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    G0002S0 0DG02 PDF

    i580p

    Contextual Info: • a ■ M m w aienow n, mm ic m s e m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 i 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS


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    2N3251A MIL-S-19500/323 MSC0281A i580p PDF

    24v ballast

    Abstract: marking 18T TR marking 18t RV3135B5X
    Contextual Info: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich


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    T-33-7 RV3135B5X 711005b 24v ballast marking 18T TR marking 18t RV3135B5X PDF

    2N914

    Abstract: transistor 2N914 24si
    Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AND V H F AM PLIFIER The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is prim a rily a universal switch b u t it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mA.


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    G-2027 G-202, 2N914 2N914 transistor 2N914 24si PDF

    Contextual Info: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)


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    2SK2884 O-220FL 20kfl) PDF

    transistor a 1941

    Abstract: 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator
    Contextual Info: HIGH ISOLATION VOLTAGE PS2801-1-Y/NL SOP OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN PS2801-1-Y/NL is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for high density


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    PS2801-1-Y/NL PS2801-1-Y/NL PS2801-1-F3 24-Hour transistor a 1941 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator PDF

    2-10P1B

    Abstract: 2SK2733
    Contextual Info: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Soree ON Resistance : RdS


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    2SK2733 594mH 2-10P1B 2SK2733 PDF

    2SK2229

    Contextual Info: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive


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    2SK2229 PDF

    2SK2507

    Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2


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    2SK2507 212juà 2SK2507 PDF

    sz 600

    Abstract: service-mitteilungen z570m VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN foto transistor scans-048 "service-mitteilungen" Leipzig Servicemitteilungen 155nu70
    Contextual Info: SERVICE-MITTEILUNGEN V E 8 IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N 1 r a d io - television 1 AUSGABE: 1V73 DATUM: N o v . 1973 R O M A g A R B g l R H S I H - B B R V I C B Q K S l B A T O R Der Service-Generator C R 0 M A ist einem größeren Kreis von Fach­


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    PDF

    bi 370 transistor e

    Contextual Info: T O S H IB A 2SK2231 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2231 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS


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    2SK2231 0-12n 20kil) bi 370 transistor e PDF

    AH5E

    Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
    Contextual Info: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E


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    PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262 PDF

    OPA2662

    Contextual Info: AUG 4 »993 B U R R -B R O W N OPA2662 Wide-Bandwidth, Dual, Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and EF circuitry, communications and test


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    OPA2662 OPA2662 16-pin 250MHz 58mA/ns PDF

    L4936N

    Contextual Info: / = T ^ 7# S C S - T H O M S O N EülDæoilLiËTriaûIMnei_ L 4 9 3 6 N /N H DUAL MULTIFUNCTION VOLTAGE REGULATOR ADVANCE DATA • STANDBY OUTPUT VOLTAGE PRECISION 5V ±2% ■ OUTPUT 2 TRACKED TO THE STANDBY OUT­ PUT ■ OUTPUT 2 DISABLE FUNCTION FOR


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    500mA 7T2T237 L4936N PDF

    bi 370 transistor e

    Contextual Info: Micmsemi a wmcnmwn, m m m 580 Pleasant St. W atertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N3501 Features • • • • 150 Volts 500mAmps Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: 500 mA Fast Switching 1265 nS NPN


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    2N3501 MIL-S-19500/366 500mAmps 100kH 10Vdc, 12Vdc, MSC0282A bi 370 transistor e PDF

    TRANSISTOR SMD MARKING CODE XI

    Abstract: 2l TRANSISTOR SMD MARKING CODE 4728 stepper 434 TRANSISTOR SMD MARKING CODE 352 Lxx 05 smd TRANSISTOR SMD MARKING CODE 7A IED01890 IEP01211 IET01883
    Contextual Info: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4728 G Overview Bipolar-IC Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Output stages are free of crossover current


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    P-DSO-24-3 IQ67006-A9077 235bOS 0103bM5 H-HlTC2l24x 023Sb05 0103b4b TRANSISTOR SMD MARKING CODE XI 2l TRANSISTOR SMD MARKING CODE 4728 stepper 434 TRANSISTOR SMD MARKING CODE 352 Lxx 05 smd TRANSISTOR SMD MARKING CODE 7A IED01890 IEP01211 IET01883 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    OM7815AIH

    Abstract: UC7815AIG TRANSISTOR 7815A qml-38535 CQCC1-N20 U3158 TO-66 can transistor smd marking Ag 5962-8855301
    Contextual Info: R E V IS IO N S LTR D E S C R IP T IO N D A TE Y R -M O -D A APPROVED A A dd ca se o u tlin e s T and U. A dd v e n d o rs C A G E 6 9 2 1 0 and U 4637. C han ge lim its fo r lin e re g u la tio n , load re g u la tio n te s ts and s ta n d b y c u rre n t drain te s t at


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    U4637. U4637 U3158. U3158 LE174JB OM7815AIH UC7815AIG TRANSISTOR 7815A qml-38535 CQCC1-N20 TO-66 can transistor smd marking Ag 5962-8855301 PDF

    EI - 33c TRANSFORMER

    Abstract: EI 33c TRANSFORMER EL Ei 33c transformer EI- 33C
    Contextual Info: Or, Call Customer S e m e ¡ 1 1-80B-548-6132 USA Only B U H R -B R O W K » OPA66O Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BU FFER < < FEATURES APPLICATIONS • WIDE BANDWIDTH: 700MHz • HIGH SLEW RATE: 3000V/(is • LOW DIFFERENTIAL GAIN/PHASE


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    1-80B-548-6132 OPA66O 700MHz OPA66O OPA66O-IGC. OPA66O-IGC OPA66Q-2GC OPA660-3GC OPA66Q-4G OPA66Q-5G EI - 33c TRANSFORMER EI 33c TRANSFORMER EL Ei 33c transformer EI- 33C PDF

    transistor smd zf

    Contextual Info: 1.4A Switching Regulator with 5V, 100mA Linear Regulator with Watchdog, RESET and ENABLE Description The CS-5111 is a dual output power sup­ ply integrated circuit. It contains a 5V ±2%, 100mA linear regulator, a watchdog timer, a linear output voltage monitor to


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    100mA CS-5111 CS-5111 CS-5111DW24 CS-5111DWR24 transistor smd zf PDF

    in52v

    Contextual Info: RP108J SERIES Low Input Voltage 3A LDO Regulator NO.EA-123-110601 OUTLINE The RP108J Series are CMOS-based voltage regulator ICs featuring 3A output with low ON-resistance. Each of these ICs consists of a voltage reference unit, an error amplifier, resistor-net for voltage setting, a


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    RP108J EA-123-110601 RP108 RP108J081x RP108xSS Room403, Room109, in52v PDF

    Contextual Info: RP108J SERIES Low Input Voltage 3A LDO Regulator NO.EA-123-110629 OUTLINE The RP108J Series are CMOS-based voltage regulator ICs featuring 3A output with low ON-resistance. Each of these ICs consists of a voltage reference unit, an error amplifier, resistor-net for voltage setting, a


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    RP108J EA-123-110629 RP108 RP108J081x RP108xSS Room403, Room109, PDF

    Contextual Info: HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Semiconductor D ata S h eet A p rii 1999 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


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    HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS HGT1S2N120BNS 1-800-4-HARRIS PDF