1N916
Abstract: LMBT4403LT1G MMBT4401LT1 MMBT4403LT1 LMBT4403LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G 2T
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LMBT4403LT1G
3000/Tape
LMBT4403LT3G
10000/Tape
236AB)
OT-23
1N916
LMBT4403LT1G
MMBT4401LT1
MMBT4403LT1
LMBT4403LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T
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LMBT4403WT1G
3000/Tape
LMBT4403WT3G
10000/Tape
SC-70
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T
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Original
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LMBT4403WT1G
3000/Tape
LMBT4403WT3G
10000/Tape
SC-70
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PDF
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LMBT4403WT1G
Abstract: 1N916 MMBT4401LT1 MMBT4403LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T
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LMBT4403WT1G
3000/Tape
LMBT4403WT3G
10000/Tape
SC-70
LMBT4403WT1G
1N916
MMBT4401LT1
MMBT4403LT1
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RXB06150W
Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor
Text: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS
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RXB06150W
FO-91B
FO-91
RXB06150W
FO-91 TRANSISTOR package
erie capacitor
ERIE ceramic capacitor
variable capacitor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
MMBT4403
-150mA
-150mA,
-15mA
150mA,
-20mA
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PDF
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MMBT4403
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
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PDF
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MARKING SMD PNP TRANSISTOR 2t
Abstract: 2T SMD TRANSISTOR TRANSISTOR SMD 2t sot23 CMBT4403
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT4403
C-120
MARKING SMD PNP TRANSISTOR 2t
2T SMD TRANSISTOR
TRANSISTOR SMD 2t sot23
CMBT4403
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PDF
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smd marking cb SOT23 transistor
Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT4403
C-120
smd marking cb SOT23 transistor
MARKING SMD PNP TRANSISTOR 2t
transistor smd 2t x
TRANSISTOR SMD 2t sot23
CMBT4403
TRANSISTOR SMD 85 330
smd transistor 2T
2T smd marking sot-23
2T SMD equivalent
Min01
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT4403
C-120
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G
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LMBT4403LT1G
3000/Tape
LMBT4403LT3G
10000/Tape
236AB)
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 1995 I HT2 Q_ PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V CBO 90 V C ollector-E m itter Voltage V CEO
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10MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T
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OT-23
CMBT4403
C-120
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PDF
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smd transistor 2T
Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT4403
C-120
smd transistor 2T
2T SMD TRANSISTOR
MARKING SMD PNP TRANSISTOR 2t
CMBT4403
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P -N - P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .14 "Iprüi Pin configuration 1 = BASE 2 » EMITTER 3 * COLLECTOR ABSOLUTE MAXIMUM RATINGS Colleetor-emitter voltage Collector current DC
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CMBT4403
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 * EMITTER 3 « COLLECTOR 2.6 2.4 _ 1.02 0.8ST 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT4403
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00
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CMBT4403
23A33T4
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT4403
MMBT4403
500mA.
OT-23
QW-R206-034
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR HT2 PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS PARAM ETER S YM B O L Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amtj = 2 5 ° C
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10/iA
DS337
10MHz
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PDF
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Marking br sot23 Transistor
Abstract: MMBT4403 2T sot-23 sot23 2t marking pc sot-23 transistor BR SOT23 MMBT4403 2T transistor 2T Transistor 2 a sot23 sot 23 transistor
Text: MMBT4403 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage
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MMBT4403
OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
Marking br sot23 Transistor
2T sot-23
sot23 2t
marking pc sot-23 transistor
BR SOT23
MMBT4403 2T
transistor 2T
Transistor 2 a sot23
sot 23 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate
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IRGBC30
O-220AB
4aSS452
T-31-Ã
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PDF
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CMBT4403
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N -P transistor M arking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 _L 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 .004 "
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CMBT4403
CMBT4403
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PDF
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MMBT4403 UTC
Abstract: No abstract text available
Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT4403
MMBT4403
500mA.
OT-23
QW-R206-034
MMBT4403 UTC
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PDF
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ssl2108
Abstract: SSL21082 sot12 SSL21081T Application Notes
Text: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 2 — 6 December 2011 Preliminary data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications.
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SSL21081T/2T/3T/4T
SSL2108X
SSL21081T
ssl2108
SSL21082
sot12
SSL21081T Application Notes
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PDF
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