BFS17W |
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Infineon Technologies
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NPN Silicon RF Transistor |
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BFS17W |
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Infineon Technologies
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Si RF Transistors, fT < 24 GHz; Package: PG-SOT323-3; VCEO (max): 15.0 V; IC(max): 25.0 mA; Ptot (max): 280.0 mW; fT (typ): 1.4 GHz; F (typ): 3.5 dB; |
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BFS17W . |
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Infineon Technologies
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For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
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BFS17W. |
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Infineon Technologies
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RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
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BFS17W |
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NXP Semiconductors
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BFS17W - NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 .. |
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BFS17W |
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Philips Semiconductors
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NPN 1 GHz wideband transistor |
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PDF
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BFS17W |
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Philips Semiconductors
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NPN Silicon RF Transistor |
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BFS17W |
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Philips Semiconductors
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NPN 1 GHz Wideband Transistor |
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BFS17W |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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BFS17W |
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Siemens
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NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
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BFS17W |
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Vishay Telefunken
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Silicon NPN Planar RF Transistor |
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BFS17W |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
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BFS17W |
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Philips Semiconductors
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NPN 1 GHz wideband transistor |
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Scan |
PDF
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BFS17W,115 |
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NXP Semiconductors
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NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd |
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BFS17W,115 |
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NXP Semiconductors
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BFS17 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3, BIP RF Small Signal |
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BFS17W,135 |
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NXP Semiconductors
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NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd |
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BFS17W,135 |
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NXP Semiconductors
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BFS17W - NPN 1 GHz wideband transistor, SOT323 Package, Standard Marking, Reel Pack, SMD, Large |
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BFS17WE6327 |
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Infineon Technologies
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TRANS GP BJT NPN 15V 0.025A 3SOT-323 T/R |
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BFS17WE6327 |
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Infineon Technologies
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 15V SOT-323 |
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BFS17WE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 15V SOT-323 |
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