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    "THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN Search Results

    "THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN Result Highlights (5)

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    "THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN Datasheets Context Search

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    Wacker Silicones p12

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
    Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available


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    SKM 300 CIRCUIT

    Abstract: SKM 400 gal 124 IGBT D 145 SKM 300 GB 123 D SKM 600 gb semikron skm 150 gb 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    skm 200 GB 12 V

    Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


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    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


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    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    GAL 700

    Abstract: 1002C skm 141
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    bi-directional switches IGBT

    Abstract: skm 254 f gax-2 semikron case d 56 hardware Semikron SKM SEMIKRON 1200 V 95 A
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1700 1700 220 / 150 440 / 300 ± 20 1250 –40 . +150 (125) 4000 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms


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    Semikron SKM 145 GB 124 DN

    Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
    Text: SKM 145 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


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    3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits PDF

    skm 152 ga 123

    Abstract: SKM 200 GB 102 D semikron skm 152 ga 123 SKM 300 GA 102 D 1502c semikron skm 152 ga skm 152 ga transistor 1502c SKM200GBD
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1


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    1502tic 1502trg skm 152 ga 123 SKM 200 GB 102 D semikron skm 152 ga 123 SKM 300 GA 102 D 1502c semikron skm 152 ga skm 152 ga transistor 1502c SKM200GBD PDF

    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C


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    Untitled

    Abstract: No abstract text available
    Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode


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    semikron SKm GAL 123D

    Abstract: CASED61
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm


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    Untitled

    Abstract: No abstract text available
    Text: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10


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    Untitled

    Abstract: No abstract text available
    Text: s e M IKRO n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Ptot = 20 k£2 Tcase = 25/80 °C Rge Tcase = 25/80 °C; tp = 1 ms p e r IG B T , Tcase = 25 °C Tj, Tstg Vsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode


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    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions * Values Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 7 5 /5 0 1 5 0 /1 0 0 ±20 390 - 4 0 . . .+150 125 2 500 Class F 40/125/56 Inverse Diode Tcase = 25/80 °C If= - lc Tcase = 25/80 °C; tp = 1 ms


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    Abstract: No abstract text available
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Rge = 20 k£2 T c a s e = 25/80 °C T c a s e = 25/80 °C; tp = 1 ms P to t p e r IG B T , Tcase Units = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc


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    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
    Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms


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    123D1 skm 152 ga 123 semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56 PDF

    Untitled

    Abstract: No abstract text available
    Text: seMIKROn Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc = 20 k£2 T c a s e = 25/80 ICM Tcase Values Units Rge °C = 25/80 °C; tp = 1 ms V ges P to t p e r IG B T , Tcase = 25 °C humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 Inverse Diode


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    40ical PDF

    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg)


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    Abstract: No abstract text available
    Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg) V¡sol humidity climate Units 1200 1200 145 /110 290 / 220 ±20 830 ^ 0 . +150 (125) 2500 Rge = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms


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    Untitled

    Abstract: No abstract text available
    Text: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1


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    L124D GAR124D PDF

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc ICM V ges = 20 k£2 Tease = 25/80 °C Rge Tease = 25/80 °C; tp = 1 ms p e r IG BT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes If= - lc IfM= - IcM Tease = 25/80 °C


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    300GB219 PDF

    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc = 20 k£2 Tcase = 25/80 ICM Tcase = 25/80 °C; tp R ge °C = 1 ms V ges Ptot Tj, Tstg Vsol humidity climate per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Values Units


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    Abstract: No abstract text available
    Text: 1 back IT S E M IK R D N zurück Absolute Maximum Ratings Symbol VcES VcGR lc ICM Vges Ptot Tj, Tstg Visol humidity climate Values Units Conditions ' 1200 1200 300 / 220 600 / 440 ±20 1660 - 4 0 .+ 1 5 0 (125) 2 500 Class F 40/125/56 Rge = 20 k£2 Tease = 25/80 °C


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