"SENSE AMPLIFIER" VOLTAGE CONTROL CURRENT PRECHARGE Search Results

Contextual Info: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing Description Features Constant Frequency Voltage Mode Control with Accurate Current Sharing n ±0.75% 0.6V Voltage Reference n Differential Remote Output Voltage Sense Amplifier

HYB 39S128160CT-7

Abstract: HYB 39S128800CT-7 HYB 39S128160CT-7.5
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)

RCP30

Abstract: TD5 THERMISTOR
Contextual Info: IR3500V DATA SHEET XPHASE3TM VR11.1 CPU VTT CONTROL IC DESCRIPTION The IR3500V Control IC combined with one or more xPhase3TM Phase IC implement the control and MOSFET driver functions for a VR11.1 CPU VTT power supply. FEATURES • • • • • • •

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3513ZMTRPBF IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or

IR3505

Abstract: IR3513MTRPBF 1718-Type
Contextual Info: IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or

IR3513ZMTRPBF

Abstract: IR3505 IR3513MTRPBF IR3513
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3513ZMTRPBF IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or

ir3513z

Abstract: IR3513ZMTRPBF IR3513ZM current loop IR3513ZMT
Contextual Info: IR3513Z DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513Z Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513Z to implement a stand-alone single-phase regulator or

Contextual Info: IR3500V DATA SHEET XPHASE3TM VR11.1 CPU VTT CONTROL IC DESCRIPTION TM The IR3500V Control IC combined with one or more xPhase3 MOSFET driver functions for a VR11.1 CPU VTT power supply. Phase IC implement the control and FEATURES • • • • • • •

5- pin smd IC 775

Abstract: thyrister controlled dc digital drive theory IR3500 IR3505 VR11 K3132
Contextual Info: IR3500V DATA SHEET XPHASE3TM VR11.1 CPU VTT CONTROL IC DESCRIPTION TM The IR3500V Control IC combined with one or more xPhase3 MOSFET driver functions for a VR11.1 CPU VTT power supply. Phase IC implement the control and FEATURES • • • • • • •

U246

Abstract: smd diode JC 9E IR3502AMPBF IR3502AMTRPBF U248 VR11 NTC 9D Thermistor NTC 400k Thermistor bth 100 nsp 105 thermistor
Contextual Info: IR3502A DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION TM The IR3502A control IC combined with an XPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502A provides overall system control

Contextual Info: IR3502B DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION The IR3502B control IC combined with an XPHASE3TM Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502B provides overall system control and interfaces with any number of Phase ICs, each driving and monitoring a single phase. The XPhase3TM

2d SMD NPn TRANSISTOR

Abstract: IR3502BM IR3502B 53A50 05625
Contextual Info: IR3502B DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION The IR3502B control IC combined with an XPHASE3TM Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502B provides overall system control and interfaces with any number of Phase ICs, each driving and monitoring a single phase. The XPhase3TM

Contextual Info: IR3502B DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION TM The IR3502B control IC combined with an XPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502B provides overall system control

nsp 106 thermistor

Abstract: TD5 310 thermistor U246 nsp 105 thermistor TD5 THERMISTOR Thermistor NTC 5D MA5195 TD2005 various PWM techniques for thyrister U248
Contextual Info: IR3502A DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION The IR3502A control IC combined with an XPHASE3TM Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502A provides overall system control and interfaces with any number of Phase ICs, each driving and monitoring a single phase. The XPhase3TM

TD5 THERMISTOR

Abstract: l5109 IR3500 IR3500MPBF IR3500MTRPBF IR3505 VR11 VRD11 thyrister SCR PIN 12v 5a dc dc boost converter
Contextual Info: IR3500 DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500 Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system

11n800

Abstract: thyrister speed control of 3 ph I M equivalent transistor bc 649 2d npn smd thermistor ntc 50k
Contextual Info: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system

39S256160T

Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

smd CA-Y

Abstract: P-TSOPII-54 smd CAY
Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

PC100-322-620

Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

IR502

Contextual Info: IR3502 DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION TM The IR3502 control IC combined with an XPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502 provides overall system control TM

tube az1

Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

PC100-222-620

Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8

Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)