Untitled
Abstract: No abstract text available
Text: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems
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APT10SCD120BCT
O-247
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Untitled
Abstract: No abstract text available
Text: APT10SCD120B 1200V, 10A Zero Recovery and Ultra Low Leakage SiC Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems
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APT10SCD120B
O-247
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Untitled
Abstract: No abstract text available
Text: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package
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APT10SCE170B
O-247
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω
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IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
O-220AB
O-263
250ns
O-247
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Untitled
Abstract: No abstract text available
Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2450KE
450mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2305
450mW
R1102B
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300a 1000v thyristor
Abstract: 100a 1000v thyristor thyristor 10A NTE308 53 diode
Text: NTE308 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
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NTE308
16kHz)
300a 1000v thyristor
100a 1000v thyristor
thyristor 10A
NTE308
53 diode
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NTE310
Abstract: No abstract text available
Text: NTE310 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
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NTE310
16kHz)
NTE310
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mosfet 10a 800v
Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
Text: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V
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SSH10N80A
mosfet 10a 800v
MOSFET 800V 10A
SSH10N80A
mosfet 10a 800v fs
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Untitled
Abstract: No abstract text available
Text: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R8010ANX
O-220FM
R1102A
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SMK1080
Abstract: No abstract text available
Text: SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=800V Low gate charge: Qg=58nC Typ. Low drain-source On resistance: RDS(on)=1.1Ω (Max.) RoHS compliant device 100% avalanche tested
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SMK1080FD
SMK1080
O-220F-3L
SDB20D45
14-NOV-12
KSD-T0O113-000
SMK1080
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WF-260
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
WF-260
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YG225D8
Abstract: power Diode 800V 10A DIODE 10a 800v
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C8
13Min
SC-67
YG225C8
YG225N8
YG225D8
YG225D8
power Diode 800V 10A
DIODE 10a 800v
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DIODE 10a 800v
Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225C8
YG225N8
YG225D8
DIODE 10a 800v
YG225D8
power Diode 800V 10A
YG225N8
N8 Diode
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Untitled
Abstract: No abstract text available
Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG225C8
13Min
SC-67
YG225N8
YG225D8
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MOSFET 800V 10A TO-3P
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
MOSFET 800V 10A TO-3P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
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MOSFET 800V 10A TO-3P
Abstract: 10n80 mosfet 337
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1ues
QW-R502-218
MOSFET 800V 10A TO-3P
mosfet 337
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mosfet 10a 800v
Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-t
QW-R502-218
mosfet 10a 800v
MOSFET 800V 10A TO-3P
MOSFET 800V 10A
10N80L
mosfet 10a 800v high power
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N8at
QW-R502-218
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10N80L
Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N80G-TC3ues
QW-R502-218
10N80L
MOSFET 800V 10A TO-3P
mosfet 10a 800v high power
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FQA10N80C
Abstract: No abstract text available
Text: TM FQA10N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA10N80C
FQA10N80C
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MOSFET 800V 10A
Abstract: ssf10n80a Tc-25-t
Text: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V
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SSF10N80A
MOSFET 800V 10A
ssf10n80a
Tc-25-t
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SSH10N80A
Abstract: 10N80A 1017 mosfet
Text: SSH1 0 N8 0 A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology 800 V BVpss ~ ^DS on = Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (M ax.) @ VDS= 800V
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SSH10N80A
SSH10N80A
10N80A
1017 mosfet
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