"NAND FLASH"8 PORT Search Results

Contextual Info: MEMORY MODULE NAND Flash 128Gb 3DFN128G08VL1459 NAND Flash Memory 128Gbit NAND Flash with 8 bit-data access Pin Assignment Top View LGA 52 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Device width: x8 - Operating voltage range

Contextual Info: MEMORY MODULE NAND Flash 256Gb NAND Flash Memory 3DFN256G08VL1460 256Gbit NAND Flash with 8 bit-data access Pin Assignment Top View LGA 52 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Device width: x8 - Operating voltage range

3DFN64G08VB1388

Contextual Info: MEMORY MODULE NAND Flash 64Gb 3DFN64G08VB1388 NAND Flash Memory 64Gbit NAND Flash with 8 bit-data access Pin Assignment Top View LGA 52 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Device width: x8 - Operating voltage range

Contextual Info: MEMORY MODULE FLASH Nand 64Gb Flash Nand Memory MODULE 3DFN64G08VB1388 64Gbit Flash Nand with 8 bit-data access Pin Assignment Top View LGA 52 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Device width: x8 - Operating voltage range

Contextual Info: FLASH MEMORY KM29N16000TS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000TS/RS is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array : (2M +64K) x 8 bit

KM29N16000ATS

Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization Flash memory with a spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array

AVR32136

Abstract: "open nand flash interface" ONFI Flash driver source code flash hamming ecc AVR32 block diagram code hamming atmel AVR UC3 avr32-g
Contextual Info: AVR32136: AVR32 UC3 NAND flash GPIO driver Features • • • • • • Open NAND flash interface ONFi . Fully configurable GPIO and timing settings. Uses the CPU local bus for high speed I/O access. Supports both 8-bit and 16-bit NAND flash devices.

Contextual Info: FLASH MEMORY KM29N32000T/R 4M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array - Data Register The KM29N32000T/R is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND

Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000AT/R 2 Mx 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array

Contextual Info: EVALSP1340CPU EVALSP1340 evaluation board rev. 2.2 for SPEAr1340 Data brief − preliminary data Features • SPEAr1340 embedded MPU ■ 4 DDR3 chips (32-bit) 1 GB ■ Serial NOR Flash, 8 MB ■ 8-bit NAND Flash, 2 Gb ■ 16-bit NAND Flash expansion connector

KM29N32000TS

Abstract: km29n32000 0D243 E5HY
Contextual Info: KM29N32000TS/RS 4M X FLASH MEMORY 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the

K9K1G08U0B

Abstract: K9K1G08B0B K9K1G08R0B 528-byte 3310H
Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B Advance FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

K9F1208B0B

Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

K9F1208U0B-YCB0

Abstract: 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

SAMSUNG K9F1208U0B

Abstract: K9F1208* technical K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

K9K1G08X0B

Abstract: K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093
Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

km29n16000at

Abstract: c60h - dc
Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: PRELIMINARY KM29V16000ATS/RS FLASH MEMORY 2M X 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register The KM29V16000ATS/RS is a 2M(2,097,152)x8 bit NAND Flash memory with a spare 64K(65.536)x8 bit. Its NAND

K9K1G08U0B

Contextual Info: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.

K9F1208X0B-V

Abstract: K9F1208B0B-Y K9F1208U0B-YCB0 K9F1208B0B-G K9F1208B0B K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

3171S

Contextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND

JESD84-A43

Abstract: emmc EXT_CSD CMD38 NAND16GAH0P EXT_CSD emmc csd emmc sector size emmc jedec 32G nand NAND32GAH0P
Contextual Info: NAND16GAH0P NAND32GAH0P NAND64GAH0P 2-Gbyte, 4-Gbyte, 8-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface ■ 2, 4 and 8 Gbytes of formatted data storage

NAND08GW3F2A

Abstract: NAND08GW3F nand16gw3
Contextual Info: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage

16G nand

Contextual Info: NANDxxGW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High density NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage applications ■