25C80
Abstract: JRC 2100 8 pin ST7FLiteUS5 DALI BASIC SO U435 MOROCCO AN2326 HE10 JRc 1431 A STX-RLINK pin out 02800E
Text: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C
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DIP16
25C80
JRC 2100 8 pin
ST7FLiteUS5
DALI BASIC SO
U435 MOROCCO
AN2326
HE10
JRc 1431 A
STX-RLINK pin out
02800E
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JRC 2100 8 pin
Abstract: JRC 2100 bs 1600 pir sensor Pinout Diagram for IC ne555 electronic watchdog application using NE555 IC 16 PIN PIR SENSOR IC PINOUT ST7DALI-EVAL kit NE555 applications and pins configurations DIP8-300 Datasheet of ic ne555
Text: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C
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SMC128A
Abstract: NAND FLASH 64MB
Text: High-density memory cards For your data storage STMicroelectronics, a recognized world leader in the non-volatile memory field, is expanding its portfolio by introducing a wide range of Flash memory cards, targeted at original equipment manufacturers and memory
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FLHDCARDS0305
SMC128A
NAND FLASH 64MB
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am49PDL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS • 20 year data retention at 125°C
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Am49PDL640AG
16-Bit)
Am29F
Am29LV
73-Ball
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2901 jrc
Abstract: jrc 2901 JRC 6001 AN1149 led matrix 8x8 mini circuits U435 MOROCCO 0X00 DIP20 HE10 1136 jrc
Text: ST7LITE2 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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PIR CONTROLLER LP 0001
Abstract: JRC 7002 TRANSISTOR SMD MARKING CODE 3401 3 phase motor soft starter circuit diagram smd schottky diode marking 321 smd diode schottky code marking 1A 2901 jrc 3 phase motor soft starter diagram CSTLS16M0X53-B0 DELTA dvp
Text: ST7LITE2 8-BIT MICROCONTROLLER WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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32-MHz
PIR CONTROLLER LP 0001
JRC 7002
TRANSISTOR SMD MARKING CODE 3401
3 phase motor soft starter circuit diagram
smd schottky diode marking 321
smd diode schottky code marking 1A
2901 jrc
3 phase motor soft starter diagram
CSTLS16M0X53-B0
DELTA dvp
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jrc 2901
Abstract: 2901 jrc real time clok ST7 ICC Family U435 MOROCCO 0X00 DIP20 HE10 SO20 ST7LITE20
Text: ST7LITE2 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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jrc 2901
Abstract: 2901 jrc ST7 ICC Family TRANSISTOR SMD MARKING CODE 1d U435 MOROCCO 0X00 DIP20 HE10 SO20 ST7LITE20
Text: ST7LITE2 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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32-MHz
jrc 2901
2901 jrc
ST7 ICC Family
TRANSISTOR SMD MARKING CODE 1d
U435 MOROCCO
0X00
DIP20
HE10
SO20
ST7LITE20
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Untitled
Abstract: No abstract text available
Text: ST7LITE2 8-BIT MICROCONTROLLER WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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32-MHz
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jrc 2901
Abstract: 2901 jrc WADC10 JRC 6001 JRC OPamp 702
Text: ST7LITE2 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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2901 jrc
Abstract: jrc 2901 A22T DALI BASIC SO ems 600-1 power supply ST7DALI dali power supply circuit diagram philips dali single line dali source code 0X00
Text: ST7DALI 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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Untitled
Abstract: No abstract text available
Text: ST7DALI 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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2901 jrc
Abstract: jrc 2901 TRANSISTOR SMD MARKING CODE 3401 AN1900 ST7DALI 0X00 AN1324 HE10 SO20 6 pin TRANSISTOR SMD CODE 21
Text: ST7DALI 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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11 TI APD
Abstract: No abstract text available
Text: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16 Kbit SRAM FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY
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uPSD3212C
uPSD3212CV
40MHz
24MHz
12-clocks
15-year
11 TI APD
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TQFP52
Abstract: TQFP80 uPSD3212A uPSD3212C uPSD3212C-40T6 uPSD3212C-40U6 uPSD3212CV uPSD3212CV-24T6 uPSD3212CV-24U6 IEEE Standard 803.2
Text: uPSD3212A, uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY
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uPSD3212A
uPSD3212C
uPSD3212CV
40MHz
24MHz
12-clocks
15-year
TQFP52
TQFP80
uPSD3212C-40T6
uPSD3212C-40U6
uPSD3212CV-24T6
uPSD3212CV-24U6
IEEE Standard 803.2
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TQFP80
Abstract: uPSD3212A uPSD3212C uPSD3212C-40T6 uPSD3212C-40U6 uPSD3212CV uPSD3212CV-24T6 uPSD3212CV-24U6 uPSD32
Text: uPSD3212A, uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY
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TQFP54
uPSD3212A
uPSD3212C
uPSD3212CV
40MHz
24MHz
12-clocks
15-year
TQFP80
uPSD3212C-40T6
uPSD3212C-40U6
uPSD3212CV-24T6
uPSD3212CV-24U6
uPSD32
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JEP137-A
Abstract: S29GL01GP S70GL02GP S29GL-P 7FF0000H
Text: S70GL-P MirrorBitTM Flash S70GL02GP 2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology S70GL-P MirrorBitTM Flash Cover Sheet Data Sheet Advance Information Notice to Readers: This document contains information on one or more products under development at
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S70GL-P
S70GL02GP
JEP137-A
S29GL01GP
S70GL02GP
S29GL-P
7FF0000H
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smd diode schottky code marking 1A
Abstract: AN1149 opamp jrc 2901 jrc "USB smartcard reader" 70.2 marking smd ATIC 64 heraeus pd955 dali bridge DALI CONTROL
Text: ST7LITE2 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI • ■ ■ ■ Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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32-MHz
smd diode schottky code marking 1A
AN1149
opamp jrc
2901 jrc
"USB smartcard reader"
70.2 marking smd
ATIC 64
heraeus pd955
dali bridge
DALI CONTROL
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UPSD3233B-40T6
Abstract: JB 2256 L-14026
Text: UPSD3234A, UPSD3234BV UPSD3233B, UPSD3233BV Flash programmable system devices with 8032 MCU and 64 Kbit SRAM Features • Fast 8-bit 8032 MCU – 40 MHz at 5.0 V, 24 MHz at 3.3 V – Core, 12-clocks per instruction ■ Dual Flash memories with memory management
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UPSD3234A,
UPSD3234BV
UPSD3233B,
UPSD3233BV
12-clocks
15-year
LQFP52
52-lead,
UPSD3233B-40T6
JB 2256
L-14026
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mod 8 ring counter using JK flip flop
Abstract: SC 2272 TTL catalog upsd3 AI07802 programmable multi pulse waveform generator cpld LQFP80 TQFP80 UPSD3253B UPSD3253BV
Text: UPSD3254A, UPSD3254BV UPSD3253B, UPSD3253BV Flash programmable system devices with 8032 MCU and 256 Kbit SRAM Features • Fast 8-bit 8032 MCU – 40 MHz at 5.0 V, 24 MHz at 3.3 V – Core, 12-clocks per instruction ■ Dual Flash memories with memory management
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UPSD3254A,
UPSD3254BV
UPSD3253B,
UPSD3253BV
12-clocks
15-year
LQFP52
52-lead,
LQFP80
80-lead,
mod 8 ring counter using JK flip flop
SC 2272
TTL catalog
upsd3
AI07802
programmable multi pulse waveform generator cpld
LQFP80
TQFP80
UPSD3253B
UPSD3253BV
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mod 8 ring counter using JK flip flop
Abstract: auxillary contacts INTERFACING MEMORY WITH 8051 THROUGH I2C PROTOCOL mod 4 ring counter using JK flip flop LQFP80 TQFP80 UPSD3233B UPSD3233B-40T6 UPSD3233B-40U6 UPSD3233BV
Text: UPSD3234A, UPSD3234BV UPSD3233B, UPSD3233BV Flash programmable system devices with 8032 MCU and 64 Kbit SRAM Features • Fast 8-bit 8032 MCU – 40 MHz at 5.0 V, 24 MHz at 3.3 V – Core, 12-clocks per instruction ■ Dual Flash memories with memory management
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UPSD3234A,
UPSD3234BV
UPSD3233B,
UPSD3233BV
12-clocks
15-year
LQFP52
52-lead,
LQFP80
80-lead,
mod 8 ring counter using JK flip flop
auxillary contacts
INTERFACING MEMORY WITH 8051 THROUGH I2C PROTOCOL
mod 4 ring counter using JK flip flop
LQFP80
TQFP80
UPSD3233B
UPSD3233B-40T6
UPSD3233B-40U6
UPSD3233BV
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seiko epson RAM IC MEMORY CARD
Abstract: seiko epson RAM IC MEMORY CARD "40 pin"
Text: FLASH MEMORY OUTLINE The FLASH MEMORY CARD series is made up of Hash Electrically Erasable Programable ROM chips. The FLASH EPROM CARD can erase data at once by electricity. Memory capacity is from 256K Bytes to 1M Bytes. HE series is 16 bit wide data bus.
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FEC257HEC0
FEC513HEC0
FEC101HEC0
FPC257HEC0
FPC513HEC0
FPC101HEC0
13HEC0,
FEC101HEC0,
seiko epson RAM IC MEMORY CARD
seiko epson RAM IC MEMORY CARD "40 pin"
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28SF400 256K x 16, 512K x 8 FLASH MEMORY 256K x 16, 512K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 2|lA at
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MT28SF400
44-Pin
16KB/8K-word
100ns
110ns,
150ns
144x16
56-PIN
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NOR Flash 1996 protect
Abstract: No abstract text available
Text: PRELIM IN ARY MT28F002B1 256K x 8 FLASH M EM ORY I^ IC R D N FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 8|a.A at
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MT28F002B1
100ns
110ns,
150ns
40-Pin
60ns/90ns
s/110ns
100ns/150ns
NOR Flash 1996 protect
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