Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
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236PB
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
100merchantability,
12-Mar-07
236PB
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Untitled
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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3 phase BUSBAR
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
18-Jul-08
3 phase BUSBAR
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VSKD 236
Abstract: VSKD236 vsk.166 vskj 56 vsk 300 VSKC 236
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
11-Mar-11
VSKD 236
VSKD236
vsk.166
vskj 56
vsk 300
VSKC 236
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VSKD 236
Abstract: vskj 56 9517
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VSKD 236
vskj 56
9517
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vsk 300
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
11-Mar-11
vsk 300
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Untitled
Abstract: No abstract text available
Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSK.166, .196, .236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) RoHS • 3500 VRMS isolating voltage COMPLIANT • Industrial standard package
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E78996
18-Jul-08
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borg
Abstract: k-236
Text: I27116 rev. A 01/2000 SERIES IRK.166, .196, .236 NEW INT-A-pak Power Modules STANDARD RECOVERY DIODES 165 A 195 A 230 A Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
borg
k-236
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VSKC
Abstract: No abstract text available
Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package
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E78996
2002/95/EC
18-Jul-08
VSKC
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Untitled
Abstract: No abstract text available
Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
08-Mar-07
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IRK E78996 701819-303ac
Abstract: I27900 E78996 rectifier module 2 A GLASS PASSIVATED BRIDGE RECTIFIER E78996 bridge I27116
Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
12-Mar-07
IRK E78996 701819-303ac
I27900
E78996 rectifier module
2 A GLASS PASSIVATED BRIDGE RECTIFIER
E78996 bridge
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IRK E78996 701819-303ac
Abstract: I27900
Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
IRK E78996 701819-303ac
I27900
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ALA2F24
Abstract: ALA2F12 ALA2PF12 ALA2PF24
Text: LA ALA VDE 2 FORM A SLIM POWER RELAY LA RELAYS (ALA) FEATURES 12.0 .472 24.0 .945 between contact and coil: Min. 6 mm .236 inch (In compliance with IEC65) • Surge withstand voltage between contact and coil: 10,000 V or more. 4. High noise immunity realized by the
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IEC65)
ALA2F12,
ALA2F24
ALA2F12
ALA2PF12
ALA2PF24
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ALA2F24
Abstract: ALA2PF24 ALA2F12 ALA2PF12 24 v DC relay
Text: LA VDE 2 Form A slim power relay LA RELAYS FEATURES 12.0 .472 24.0 .945 25.0 .984 mm inch tween contact and coil: Min. 6 mm .236 inch In compliance with IEC65 • Surge withstand voltage between contact and coil: 10,000 V or more. 4. High noise immunity realized by the
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IEC65)
ALA2PF12,
ALA2F12,
ALA2F24
ALA2PF24
ALA2F12
ALA2PF12
24 v DC relay
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ALA2F24
Abstract: ALA2PF12 ALA2F12 ALA2PF24
Text: LA VDE 2 Form A slim power relay LA RELAYS FEATURES 12.0 .472 24.0 .945 25.0 .984 mm inch tween contact and coil: Min. 6 mm .236 inch In compliance with IEC65 • Surge withstand voltage between contact and coil: 10,000 V or more. 4. High noise immunity realized by the
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IEC65)
ALA2F12,
ALA2F24
ALA2PF12
ALA2F12
ALA2PF24
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1N31
Abstract: crystal diode LTPJ
Text: MIL -S-19500/236A 20 October 1970 SUPERSEDING MIL-S-19500/236 23 April 1862 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON fTVDf 1KTQ1 X X JL.11 U i. This specification is m andatory for use by all D epart m ents and A gencies of the D epartm ent of D efense.
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MIL-S-19500/236A
MIL-S-19500/236
1N31
crystal diode
LTPJ
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152k 2KV
Abstract: rr 102k 2kv 122k 2kv 102-KA 222K 1KV 472k 1kv 472k 2kv RR 272K 2KV 122K 1KV 182k 2kv
Text: TDK Ceramic Capacitors 1 to 3kVdc CERAMIC DISC CAPACITORS CLASS II, LOW DISSIPATION, RR TYPE [1, 2, 3kVdc] FEATURES • This product is suitable for preventing dielectric break down of power transistors and diodes in a switching power supply, for suppressing noise
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Knox Semiconductor
Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
Text: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices
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QQ0Q24Q
DO-35
Knox Semiconductor
zener K270
K300
K120
K150
K180
K210
K240
K270
K330
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1n4146 zener
Abstract: Zener diode 1N4146 LM 317 TO 92 PACKAGE THOMSON LM LM33S LM238 LM336 lm336 pin diagram 1N4148 thomson 1N4148
Text: THOMSON SEMICONDUCTORS 2.5 V V O L T A G E REFERENCES 2.5 V V O L T A G E REFERENCES The LM 236 and LM 336 are précision 2 ,5 V regulator diodes. These voltage refe rence monolithic ICs operate like 2 .5 V zener diodes w ith a Ipw tem perature coefficient and a dynam ic im pedance of 0 .2 ]. A third pin enabies adjusting
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LM236
LM336
CB-97
LM33S
LM236AZ
1n4146 zener
Zener diode 1N4146
LM 317 TO 92 PACKAGE
THOMSON LM
LM238
lm336 pin diagram
1N4148 thomson
1N4148
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