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    "256K X 16" SRAM PLCC Search Results

    "256K X 16" SRAM PLCC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F020-90/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy

    "256K X 16" SRAM PLCC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.2 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		PDF GLT6400L16 GLT6400L16 32TYP 75TYP

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		PDF GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP

    "256K x 16" SRAM PLCC

    Abstract: GLT710008
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2000 Rev. 0.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		PDF GLT6400M16 GLT6400M16 75TYP 36TYP "256K x 16" SRAM PLCC GLT710008

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		PDF GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP

    rfid cards with AT89c2051 ic

    Abstract: sram 5volt 4m AT45DB041 AT29C020 MCU00100 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV400
    Text: PRODUCT GUIDE April 1998 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K bit, 2.7-Volt to 3.6-Volt EPROM Now AT27BV512 64K x 8 70-150 ns 512K bit, 2.7-Volt to 3.6-Volt EPROM


    Original     		PDF AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV040 AT27BV4096 AT27BV400 AT93C56 AT93C57 rfid cards with AT89c2051 ic sram 5volt 4m AT45DB041 AT29C020 MCU00100 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV400

    AT45D321

    Abstract: TbA 2025 ATMCU00100 AT8051 AT27LV520 AT27BV4096 AT27BV512 AT27BV800 AT27BV010 AT27BV020
    Text: R PRODUCT GUIDE October 1998 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K-bit, 2.7-Volt to 3.6-Volt EPROM AT27BV512 64K x 8 70-150 ns 512K-bit, 2.7-Volt to 3.6-Volt EPROM


    Original     		PDF AT27BV256 256K-bit, AT27BV512 512K-bit, AT27BV010 AT27BV1024 AT27BV020 AT27BV040 AT27BV4096 AT27BV400 AT45D321 TbA 2025 ATMCU00100 AT8051 AT27LV520 AT27BV4096 AT27BV512 AT27BV800 AT27BV010 AT27BV020

    toshiba tc 97101

    Abstract: tc 97101 M7401 M73049 "256K x 16" SRAM PLCC M73002 M7206 M7-300 M72016 T 9722
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 3, 1997 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Marc Hartranft QA Engineering Department Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT


    Original     		PDF CY74FCT163952TP CY7C341-25JI FAMOS-P20 CY7C374I-JC M72048 FLASH-FL28D toshiba tc 97101 tc 97101 M7401 M73049 "256K x 16" SRAM PLCC M73002 M7206 M7-300 M72016 T 9722

    8M-BIT CMOS SERIAL FLASH GENERAL

    Abstract: AT27BV010 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV4096 AT27BV512 AT27BV800 TQFP 100 PACKAGE
    Text: PRODUCT GUIDE October 1997 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K bit, 2.7-Volt to 3.6-Volt Now AT27BV512 64K x 8 90-150 ns 512K bit, 2.7-Volt to 3.6-Volt Now AT27BV010


    Original     		PDF AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV040 AT27BV4096 AT27BV800 1024K 8/512K 8M-BIT CMOS SERIAL FLASH GENERAL AT27BV010 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV4096 AT27BV512 AT27BV800 TQFP 100 PACKAGE

    IC1210-m128LQ

    Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
    Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are


    Original     		PDF

    CY7C4271-JC

    Abstract: cypress 98267 9832 CY5037
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 4, 1998 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 4, 1998


    Original     		PDF CY62128V-VC CY62128V-ZSC CY7C4271-JC cypress 98267 9832 CY5037

    super avr manual

    Abstract: AT90SC6464C-USB Transponder 125k 80C31 MICROCONTROLLER development board ATMEL VHDL code for ADC and DAC SPI with FPGA interface bluetooth with AVR ATMEGA 16 at93c46 524 ATMega Controller 32k of AT89c52 microcontroller rfid based flash 32 Pin PLCC 2mbit
    Text: R PRODUCT GUIDE June 2000 AT90 Series AVR 8-bit Microcontrollers Part Number Processor Description Availability AT90S1200 AVR AVR RISC, In-System Programmable Microcontroller with 1K Byte Flash and 64 Bytes EEPROM, 20-pin PDIP, 20-lead SOIC and 20-lead SSOP Packages


    Original     		PDF AT90S1200 AT90S2313 AT90S2323 AT90LS2323 AT90S2343 AT90LS2343 AT90S2333 AT90LS2333 20-pin 20-lead super avr manual AT90SC6464C-USB Transponder 125k 80C31 MICROCONTROLLER development board ATMEL VHDL code for ADC and DAC SPI with FPGA interface bluetooth with AVR ATMEGA 16 at93c46 524 ATMega Controller 32k of AT89c52 microcontroller rfid based flash 32 Pin PLCC 2mbit

    8 bit sequential multiplier VERILOG

    Abstract: ATMEGA 32 AVR DATASHEET data sheet of AT89c52 microcontroller rfid based 8 bit microprocessor using vhdl interface bluetooth with AVR ATMEGA 16 interface bluetooth with AVR atmel isp attiny atmega Tiny 84 pin plcc ic base ic at89c51
    Text: R PRODUCT GUIDE September 1999 AT90 Series AVR 8-bit Microcontrollers Part Number Processor AT90S1200 AVR AVR RISC, In-System Programmable Microcontroller with 1K Byte Flash and 64 Bytes EEPROM, 20-pin PDIP, 20-pin SOIC and 20-pin SSOP Packages Description


    Original     		PDF AT90S1200 20-pin AT90S2313 AT90S2323 AT90LS2323 0031U 8 bit sequential multiplier VERILOG ATMEGA 32 AVR DATASHEET data sheet of AT89c52 microcontroller rfid based 8 bit microprocessor using vhdl interface bluetooth with AVR ATMEGA 16 interface bluetooth with AVR atmel isp attiny atmega Tiny 84 pin plcc ic base ic at89c51

    m63043

    Abstract: CY82C691-NC M63019 CY82C693-NC m63012 spcm 95441 M63004 PALCE22V10-J 962-01
    Text: RELIABILITY MONITOR SUMMARY Description of Data Table Column Headings AAA AAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA


    Original     		PDF CYM74P430BPM 256KB CS9106AM CYM1821PY CYM1831PM m63043 CY82C691-NC M63019 CY82C693-NC m63012 spcm 95441 M63004 PALCE22V10-J 962-01

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		PDF GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP

    64mb edo dram simm

    Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
    Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s


    Original     		PDF

    LA 8512

    Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER


    OCR Scan     		PDF 100ns 16Bit 32Blt 18Bit 36Bit 200ns 250ns LA 8512 samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory

    samsung 64k nmos static ram

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COMPONENT KM XX X C DEVICE TYPE •4 •42 •6 •23 •28 •93 •75 •65 DRAM VIDEO MEMORY SRAM MASK ROM STANDARD EEPROM Serial EEPROM FIFO PSEUDO ORGANIZATION • 1 : X1 •4 : X4 •8 : X8 •9 : X9


    OCR Scan     		PDF 100ns 120ns 200ns 100ns 120ns 150ns 200ns 75CXXA samsung 64k nmos static ram

    Untitled

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COM PONENT KM XX X C XXXX X X X X - XX DEVICE TYPE SPEED •4 : •42: •6 : •23: •28: •93: •75: •65: •6: 60ns •7: 70ns •8: 80ns •10: 100ns •12: 120ns •20: 200ns DRAM VIDEO MEMORY


    OCR Scan     		PDF 100ns 120ns 200ns 100ns 120ns 150ns 200ns 75CXXA

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    Untitled

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED 6 0n s ORGANIZATION •7 • 1: XI • 4: X4 70ns 80ns •1 0 100ns • 8 X8 • 9 X9 •1 6 X16 •1 8 X1S PROCESS & POWER •C CMOS. 5V •V CMOS. 3 3V PACKAGE


    OCR Scan     		PDF 100ns 16M--4K. I256K. 25SOIC 75CXXA

    Untitled

    Abstract: No abstract text available
    Text: PARADIGM Product Family MODULES Secondary Level Cache Modules Static RAM Modules • • • • • • • • PDM4M096S PDM4M096L PDM4M4030 PDM4M4040 PDM4M4050 PDM4M4060 PDM4M4110 PDM4M4120 512K x 8 Asynchronous (512K x 8 Asynchronous) (64Kx 32 Asynchronous)


    OCR Scan     		PDF PDM4M096S PDM4M096L PDM4M4030 PDM4M4040 PDM4M4050 PDM4M4060 PDM4M4110 PDM4M4120 512Kx 82420TX

    transistor KSP 42

    Abstract: irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel
    Text: ORDERING INFORMATION KSV 3100A C N/ + BURN-IN OPTIONAL (SEE BURN-IN PROGRAM) PACKAGE TYPE (SEE EACH SPEC OF DEVICE) OPERATING TEMP IC’S ONLY BLANK: SEE INDIVIDUAL SPEC C : 0 - 70°C I : - 40 - 85°C M : - 5 5 - + 125°C DEVICE NUMBER AND SUFFIX (OPTIONAL)


    OCR Scan     		PDF OT-23 O-220 100ns 120ns 150ns 200ns 16bit transistor KSP 42 irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel

    SC4M

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : 60ns •7 • 70ns •8 : 80ns •10: 100ns ORGANIZATION • 8 • 9 •16 • 18 X1 X4 X8 X9 X16 X18 PROCESS & POWER •C CMOS, 5V •V CMOS, 3 3V PACKAGE


    OCR Scan     		PDF 100ns 16M/4K, 16M/2K, 16M/1K, 75CXXA 100ns SC4M

    KM23C1010

    Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 KM23C1010 KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ